Selective inhibition in atomic layer deposition of silicon-containing films
AssigneeLam Research Corporation
InventorsJon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
Life of this patent
Estimating the term…
Abstract
Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
Claims14
A method of processing semiconductor substrates, the method comprising:
- exposing a substrate comprising a feature to a silicon-containing precursor to form an adsorbed layer;
- and
- exposing the adsorbed layer to a hydrogen-containing inhibitor to selectively inhibit deposition of a silicon-containing film on the substrate,
- wherein the silicon-containing precursor comprises at least one Si—H bond.
Dependencies are inferred from the claim text.