H10P 14/3451
Structure
Official title: {Structure}
H10P14/3451 (Structure) appears on 4,812 US grants and 5,708 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,812
- Published applications
- 5,708
- Assignees
- 1,112
- Inventors
- 8,322
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 6 | 0 |
| 1985 | 6 | 0 |
| 1986 | 5 | 0 |
| 1987 | 8 | 0 |
| 1988 | 6 | 0 |
| 1989 | 7 | 0 |
| 1990 | 5 | 0 |
| 1991 | 15 | 0 |
| 1992 | 8 | 0 |
| 1993 | 13 | 0 |
| 1994 | 19 | 0 |
| 1995 | 13 | 0 |
| 1996 | 19 | 0 |
| 1997 | 8 | 0 |
| 1998 | 26 | 0 |
| 1999 | 26 | 0 |
| 2000 | 24 | 0 |
| 2001 | 41 | 24 |
| 2002 | 46 | 81 |
| 2003 | 52 | 65 |
| 2004 | 69 | 88 |
| 2005 | 52 | 121 |
| 2006 | 53 | 129 |
| 2007 | 94 | 102 |
| 2008 | 74 | 107 |
| 2009 | 88 | 133 |
| 2010 | 106 | 159 |
| 2011 | 115 | 167 |
| 2012 | 106 | 167 |
| 2013 | 120 | 188 |
| 2014 | 187 | 258 |
| 2015 | 220 | 334 |
| 2016 | 315 | 330 |
| 2017 | 337 | 375 |
| 2018 | 305 | 338 |
| 2019 | 336 | 333 |
| 2020 | 313 | 391 |
| 2021 | 322 | 375 |
| 2022 | 274 | 398 |
| 2023 | 244 | 420 |
| 2024 | 274 | 300 |
| 2025 | 305 | 230 |
| 2026 | 138 | 95 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Semiconductor device with nanowire heterojunction and manufacturing method thereof29 Sep 2026US 12,751,032 B2Enkris Semiconductor, Inc.
- Isolation features for semiconductor devices and methods of fabricating the same29 Sep 2026US 12,751,075 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline oxide film and semiconductor device29 Sep 2026US 12,751,220 B2Flosfia Inc.
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Multi-gate device fabrication and structures thereof8 Oct 2026US 2026/0313936 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Isolation structures for transistors1 Oct 2026US 2026/0304811 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby3,970US 7,402,506 B2Eastman Kodak Company · 2008
- Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator1,026US 7,601,984 B2Canon Kabushiki Kaisha · 2009
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005