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US 12,751,220 B2Granted
Crystalline oxide film and semiconductor device
AssigneesFlosfia Inc., Kyoto University
InventorsKentaro Kaneko, Hitoshi Takane, Toshimi Hitora
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Abstract
Provided is a crystalline oxide film including an oxide of germanium, an area percentage of abnormal grains determined by surface SEM observation being 3% or less.
Claims10
A crystalline oxide film comprising an oxide of germanium, an area percentage of abnormal grains determined by surface SEM observation being 3% or less.
Dependencies are inferred from the claim text.