H10P 14/3252
Alternating layers
Official title: {Alternating layers, e.g. superlattice}
H10P14/3252 (Alternating layers) appears on 870 US grants and 1,016 published applications in this corpus.
Search patents in H10P- Granted patents
- 870
- Published applications
- 1,016
- Assignees
- 360
- Inventors
- 1,817
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 5 | 0 |
| 1989 | 10 | 0 |
| 1990 | 8 | 0 |
| 1991 | 12 | 0 |
| 1992 | 7 | 0 |
| 1993 | 8 | 0 |
| 1994 | 7 | 0 |
| 1995 | 9 | 0 |
| 1996 | 6 | 0 |
| 1997 | 5 | 0 |
| 1998 | 7 | 0 |
| 1999 | 7 | 0 |
| 2000 | 6 | 0 |
| 2001 | 9 | 6 |
| 2002 | 6 | 19 |
| 2003 | 14 | 16 |
| 2004 | 10 | 27 |
| 2005 | 17 | 17 |
| 2006 | 16 | 28 |
| 2007 | 7 | 21 |
| 2008 | 16 | 22 |
| 2009 | 17 | 14 |
| 2010 | 18 | 19 |
| 2011 | 11 | 35 |
| 2012 | 23 | 45 |
| 2013 | 28 | 54 |
| 2014 | 46 | 58 |
| 2015 | 55 | 61 |
| 2016 | 55 | 51 |
| 2017 | 48 | 47 |
| 2018 | 42 | 43 |
| 2019 | 53 | 68 |
| 2020 | 56 | 50 |
| 2021 | 39 | 39 |
| 2022 | 28 | 60 |
| 2023 | 39 | 73 |
| 2024 | 40 | 59 |
| 2025 | 47 | 66 |
| 2026 | 20 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Gate-all-around (GAA) device including a superlattice11 Aug 2026US 12,707,690 B2Atomera Incorporated
- Carbon-containing cap layer for doped semiconductor epitaxial layer4 Aug 2026US 12,701,762 B2APPLIED Materials.Inc.
- Dislocation reduction in semiconductor compounds4 Aug 2026US 12,701,828 B2Sensor Electronic Technology, Inc.
- Methods of forming superlattice structures using nanoparticles14 Jul 2026US 12,685,041 B2ASM IP Holding B. V.
- Method and a Substrate Processing Apparatus for Forming an Epitaxial Stack on a Plurality of Substrates16 Jul 2026US 2026/0201603 A1ASM IP Holding B. V.
- Methods of formation of a sige/si superlattice16 Jul 2026US 2026/0206272 A1APPLIED Materials.Inc.
- Method for making piezoelectric devices including compound semiconductor materials and a superlattice layer2 Jul 2026US 2026/0190861 A1Atomera Incorporated
- Method for manufacturing high-quality gan hemt power semiconductor epitaxial wafer25 Jun 2026US 2026/0182263 A1Wavelord Co., Ltd
- Epitaxial structure, power device and manufacturing method of epitaxial structure18 Jun 2026US 2026/0173475 A1Taiwan-Asia Semiconductor Corporation
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000
- Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment490US 5,273,609 ATexas Instruments Incorporated · 1993
- Semiconductor device and method355US 10,510,871 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- GaN-based devices using (Ga, AL, In)N base layers311US 6,156,581 AAdvanced Technology Materials, Inc. · 2000