H10P 14/3251
Consisting of three or more layers
Official title: {consisting of three or more layers}
H10P14/3251 (Consisting of three or more layers) appears on 2,104 US grants and 2,548 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,104
- Published applications
- 2,548
- Assignees
- 724
- Inventors
- 3,939
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 4 | 0 |
| 1986 | 7 | 0 |
| 1987 | 14 | 0 |
| 1988 | 15 | 0 |
| 1989 | 20 | 0 |
| 1990 | 9 | 0 |
| 1991 | 15 | 0 |
| 1992 | 12 | 0 |
| 1993 | 14 | 0 |
| 1994 | 20 | 0 |
| 1995 | 22 | 0 |
| 1996 | 13 | 0 |
| 1997 | 15 | 0 |
| 1998 | 25 | 0 |
| 1999 | 14 | 0 |
| 2000 | 25 | 0 |
| 2001 | 25 | 21 |
| 2002 | 26 | 105 |
| 2003 | 66 | 166 |
| 2004 | 50 | 80 |
| 2005 | 55 | 70 |
| 2006 | 49 | 78 |
| 2007 | 40 | 73 |
| 2008 | 44 | 59 |
| 2009 | 53 | 49 |
| 2010 | 47 | 57 |
| 2011 | 45 | 87 |
| 2012 | 53 | 96 |
| 2013 | 71 | 109 |
| 2014 | 110 | 127 |
| 2015 | 116 | 121 |
| 2016 | 114 | 128 |
| 2017 | 111 | 107 |
| 2018 | 88 | 105 |
| 2019 | 111 | 142 |
| 2020 | 116 | 103 |
| 2021 | 78 | 92 |
| 2022 | 66 | 134 |
| 2023 | 85 | 155 |
| 2024 | 94 | 137 |
| 2025 | 84 | 114 |
| 2026 | 50 | 33 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of increasing sensitivity and limits of detection and controlling fluid flow over sensor and sensor array6 Oct 2026US 12,757,650 B2The United States of America as represented by the Secretary of the Air Force
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Process for producing a crystalline layer18 Aug 2026US 12,709,820 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Buffer structures for mitigation of defects at device interfaces and methods for preparing the same27 Aug 2026US 2026/0255891 A1Nanotronics Imaging, Inc.
- Methods for Transferring Graphene to Substrates and Related Lithographic Stacks and Laminates6 Aug 2026US 2026/0231697 A1Bard Access Systems, Inc.
- Uniform And Controllable Silicone Doping Of Aluminum Nitride30 Jul 2026US 2026/0218418 A1The Regents of the University of Michigan
- Crystalline oxide semiconductor film, layered structure, and semiconductor device23 Jul 2026US 2026/0209989 A1Shin-Etsu Chemical Co., Ltd.
- Method and a Substrate Processing Apparatus for Forming an Epitaxial Stack on a Plurality of Substrates16 Jul 2026US 2026/0201603 A1ASM IP Holding B. V.
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000
- Method for producing an electronic device having a multi-layer structure496US 4,771,015 ACanon Kabushiki Kaisha · 1988
- Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment490US 5,273,609 ATexas Instruments Incorporated · 1993
- Methods of forming silicon germanium tin films and structures and devices including the films473US 9,905,420 B2ASM IP Holding B. V. · 2018