Method and a Substrate Processing Apparatus for Forming an Epitaxial Stack on a Plurality of Substrates

A method of forming an epitaxial stack on a plurality of substrates;

• the method comprising
• providing the plurality of substrates to a process chamber;
• and
• executing a plurality of deposition cycles, to form the epitaxial stack on the plurality of substrates, the epitaxial stack comprising a first epitaxial layer stacked alternatingly and repeatedly with a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer, wherein the first epitaxial layer has a phosphorus concentration in a range of 0.5 atomic % to 3 atomic %, and wherein a deposition cycle comprises:
• a first deposition pulse comprising a provision of a first reaction gas mixture to the process chamber to form the first epitaxial layer having a first lattice parameter, and
• a second deposition pulse comprising a provision of a second reaction gas mixture to the process chamber to form the second epitaxial layer having a second lattice parameter, the second reaction gas mixture being different from the first reaction gas mixture,
• wherein the first and second lattice parameters are native lattice parameters.

A substrate processing apparatus for forming an epitaxial stack on a plurality of substrates, the apparatus comprising:

• a process chamber extending in a longitudinal direction,
• a substrate boat for holding the plurality of substrates and being receivable in the process chamber,
• a heater configured for heating and maintaining process temperature in the process chamber,
• a silane precursor storage module comprising at least one of a mono-silane precursor, a high order straight chain silane precursor, a high order branched silane precursor and a cyclic silane precursor,
• a Group-VA element precursor storage module,
• a pressure controller configured for attaining and maintaining process pressure in the process chamber,
• a controller configured for executing instructions, comprised in a non-transitory computer readable medium, to cause the substrate processing apparatus to form the epitaxial stack on the plurality of substrates in accordance with a method comprising:
• providing the plurality of substrates to the process chamber;
• and
• executing a plurality of deposition cycles to form the epitaxial stack on the plurality of substrates, the epitaxial stack comprising a first epitaxial layer stacked alternatingly and repeatedly with a second epitaxial layer, the second epitaxial layer being different from the first epitaxial layer, wherein a deposition cycle comprises:
• a first deposition pulse comprising a provision of a first reaction gas mixture to the process chamber to form the first epitaxial layer having a first lattice parameter, and
• a second deposition pulse comprising a provision of a second reaction gas mixture to the process chamber, to form the second epitaxial layer having a second lattice parameter, the second reaction gas mixture being different from the first reaction gas mixture,
• wherein the first and second lattice parameters are native lattice parameters and wherein the provision of the second reaction gas mixture comprises providing a second semiconductor material precursor gas.