US 2026/0173475 A1 · EPITAXIAL STRUCTURE, POWER DEVICE AND MANUFACTURING METHOD OF EPITAXIAL STRUCTURE

Abstract

An epitaxial structure is provided. The epitaxial structure mainly comprises two transition layers, an aluminum-containing transition layer, a gallium-containing transition layer, and a buffer layer therebetween. The aluminum-containing transition layer is disposed on a silicon substrate and includes an aluminum-containing three-dimensional structure and an aluminum-containing two-dimensional structure. The aluminum-containing three-dimensional structure is formed on the silicon substrate and grown transitionally to partially form the aluminum-containing two-dimensional structure. The gallium-containing transition layer is disposed on the buffer layer and includes a gallium-containing three-dimensional structure and a gallium-containing two-dimensional structure. The gallium-containing three-dimensional structure is formed on the buffer layer and grown transitionally to partially form the gallium-containing two-dimensional structure. By means of two three-dimensional to two-dimensional transition layers, the lattice difference between the silicon substrate and the epitaxial layer can be released and the internal stress can be reduced.

Claims19

Dependent claims

An epitaxial structure, comprising:

an aluminum-containing transition layer disposed on a substrate, the aluminum-containing transition layer having an aluminum-containing three-dimensional structure and an aluminum-containing two-dimensional structure, wherein the aluminum-containing three-dimensional structure is formed on the substrate and grown to partially transition into the aluminum-containing two-dimensional structure;
an aluminum-containing homogeneous layer disposed on the aluminum-containing two-dimensional structure;
a first buffer layer disposed on the aluminum-containing homogeneous layer;
a gallium-containing transition layer disposed on the first buffer layer, the gallium-containing transition layer having a gallium-containing three-dimensional structure and a gallium-containing two-dimensional structure, wherein the gallium-containing three-dimensional structure is formed on the first buffer layer and grown to partially transition into the gallium-containing two-dimensional structure;
a gallium-containing homogeneous layer disposed on the gallium-containing two-dimensional structure;
and
a second buffer layer, disposed on the gallium-containing homogeneous layer.

4 more elements

A manufacturing method of an epitaxial structure, comprising:

forming an aluminum-containing transition layer disposed on a substrate, the aluminum-containing transition layer having an aluminum-containing three-dimensional structure and an aluminum-containing two-dimensional structure, wherein the aluminum-containing three-dimensional structure is formed on the substrate and grown to partially transition into the aluminum-containing two-dimensional structure;
forming an aluminum-containing homogeneous layer disposed on the aluminum-containing two-dimensional structure;
forming a first buffer layer disposed on the aluminum-containing homogeneous layer;
forming a gallium-containing transition layer disposed on the first buffer layer, the gallium-containing transition layer having a gallium-containing three-dimensional structure and a gallium-containing two-dimensional structure, wherein the gallium-containing three-dimensional structure is formed on the first buffer layer and grown to partially transition into the gallium-containing two-dimensional structure;
forming a gallium-containing homogeneous layer disposed on the gallium-containing two-dimensional structure;
and
forming a second buffer layer, disposed on the gallium-containing homogeneous layer.

4 more elements

Dependencies are inferred from the claim text.

Epitaxial structure, power device and manufacturing method of epitaxial structure

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Epitaxial structure, power device and manufacturing method of epitaxial structure

Life of this patent

Abstract

Claims19