Gate-all-around (GAA) device including a superlattice

A semiconductor gate-all-around (GAA) device comprising:

• spaced apart source and drain regions;
• a plurality of semiconductor nanosheets extending between the source and drain regions;
• a gate surrounding the plurality of semiconductor nanosheets in a gate-all-around arrangement;
• and
• a superlattice vertically centered within each of the nanosheets, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon.

A semiconductor gate-all-around (GAA) device comprising:

• spaced apart source and drain regions;
• a plurality of semiconductor nanosheets extending between the source and drain regions;
• a gate surrounding the plurality of semiconductor nanosheets in a gate-all-around arrangement;
• and
• first and second vertically spaced-apart superlattices within the at least one semiconductor nanosheet, each of the first and second superlattices comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• the at least one non-semiconductor monolayer in a first group of layers of the superlattice comprising oxygen and devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice comprising carbon.