Methods of formation of a sige/si superlattice
AssigneeApplied Materials, Inc.
InventorsJohn TOLLE, Thomas KIRSCHENHEITER, Joe MARGETIS, Patricia M. LIU, Zuoming ZHU, Flora Fong-Song CHANG
Life of this patent
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Abstract
A method and apparatus for forming a super-lattice structure on a substrate is described herein. The super-lattice structure includes a plurality of silicon-germanium layers and a plurality of silicon layers disposed in a stacked pattern. The methods described herein produce a super-lattice structure with transition width of less than about 1.4 nm between each of the silicon-germanium layers and an adjacent silicon layer. The methods described herein include flowing one or a combination of a silicon containing gas, a germanium containing gas, and a halogenated species.
Claims20
A method of forming a semiconductor device, comprising:
- (a) flowing a silicon containing gas and a germanium containing gas into a deposition chamber to form a silicon-germanium layer on a substrate within the deposition chamber, the silicon containing gas flows at a first flow rate and the germanium containing gas flows at a second flow rate;
- (b) stopping a flow of the germanium containing gas into the deposition chamber after forming the silicon-germanium layer;
- (c) flowing a halogenated species into the deposition chamber;
- and
- (d) forming a silicon layer on the substrate within the deposition chamber.
A controller configured to control a process, the process comprising:
- (a) flowing a silicon containing gas and a germanium containing gas into a deposition chamber to form a silicon-germanium layer;
- (b) stopping the flow of the silicon containing gas and the germanium containing gas into the deposition chamber after forming the silicon-germanium layer;
- (c) flowing a halogenated species into the deposition chamber;
- and
- (d) flowing a silicon containing gas into the deposition chamber to form a silicon layer.
A controller configured to control a process, the process comprising:
- flowing a silicon containing gas and a germanium containing gas into a deposition chamber to form a silicon-germanium layer;
- stopping the flow of the germanium containing gas into the deposition chamber after forming the silicon-germanium layer;
- flowing a halogenated species into the deposition chamber;
- and
- forming a silicon layer from the silicon containing gas.
Dependencies are inferred from the claim text.