H10P 14/3246
Monolayers
Official title: {Monolayers}
H10P14/3246 (Monolayers) appears on 155 US grants and 199 published applications in this corpus.
Search patents in H10P- Granted patents
- 155
- Published applications
- 199
- Assignees
- 120
- Inventors
- 475
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 3 |
| 2003 | 1 | 2 |
| 2004 | 0 | 2 |
| 2005 | 3 | 2 |
| 2006 | 1 | 3 |
| 2007 | 2 | 7 |
| 2008 | 2 | 0 |
| 2009 | 2 | 1 |
| 2010 | 3 | 1 |
| 2011 | 1 | 2 |
| 2012 | 1 | 3 |
| 2013 | 2 | 6 |
| 2014 | 3 | 6 |
| 2015 | 6 | 8 |
| 2016 | 11 | 9 |
| 2017 | 11 | 13 |
| 2018 | 12 | 18 |
| 2019 | 17 | 17 |
| 2020 | 16 | 18 |
| 2021 | 10 | 11 |
| 2022 | 11 | 12 |
| 2023 | 9 | 21 |
| 2024 | 6 | 16 |
| 2025 | 11 | 13 |
| 2026 | 4 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,347 B2Kokusai Electric Corporation
- Integrated circuit structure and method for forming the same25 Aug 2026US 12,720,834 B2National Taiwan University
- SiC semiconductor substrate and fabrication method of the SiC semiconductor substrate28 Jul 2026US 12,696,508 B2Rohm Co., Ltd.
- Non-covalent modification of graphene-based chemical sensors14 Apr 2026US 12,604,506 B2Regents of the University of Minnesota
- Metal features of a semiconductor device and methods for forming the same25 Nov 2025US 12,484,253 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Anti-Stiction Process for Mems Device14 May 2026US 2026/0132019 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for making semiconductor device including an enriched silicon 28 epitaxial layer30 Apr 2026US 2026/0123299 A1Atomera Incorporated
- Method for making memory device including a superlattice gettering layer16 Apr 2026US 2026/0107703 A1Atomera Incorporated
- Semiconductor device including a superlattice providing metal work function tuning5 Mar 2026US 2026/0068244 A1Atomera Incorporated
- Semiconductor device and method for manufacturing the same19 Feb 2026US 2026/0052948 A1Electronics and Telecommunications Research Institute
Most cited
By later US patents
- Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers382US 5,751,018 AThe Regents of the University of California · 1998
- Field-effect transistor having a delta-doped ohmic contact123US 4,780,748 AAmerican Telephone and Telegraph Company, AT&T Bell Laboratories · 1988
- Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities121US 6,064,078 AXerox Corporation · 2000
- Method for making a semiconductor device comprising a lattice matching layer118US 7,700,447 B2Mears Technologies, Inc. · 2010
- Semiconductor device comprising a lattice matching layer115US 7,718,996 B2Mears Technologies, Inc. · 2010