Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a transfer substrate;
• an adhesive layer that is in contact with the transfer substrate;
• and
• a semiconductor layer that is in contact with the adhesive layer,
• wherein the adhesive layer comprises a lower portion and first and second protrusions that is protruding from the lower portion of the adhesive layer,
• wherein the first and second protrusions of the adhesive layer are spaced apart from each other,
• the semiconductor layer covers the first and second protrusions of the adhesive layer, and
• a portion of the semiconductor layer is disposed between the first and second protrusions of the adhesive layer.

A method for manufacturing a semiconductor device, the method comprising:

• patterning a growth substrate to form a first protrusion pattern and a second protrusion pattern;
• forming an isolation layer covering the first and second protrusion patterns, wherein the isolation layer comprises a first recessed part between the first and second protrusion patterns;
• forming a semiconductor core on the first recessed part of the isolation layer;
• growing the semiconductor color to form a semiconductor layer, wherein a portion of the semiconductor layer is disposed at a level higher than a level of the isolation layer;
• and
• separating the semiconductor layer from the isolation layer.