Anti-Stiction Process for Mems Device

A method, comprising:

• providing a substrate having a plurality of cavities formed therein;
• forming an oxide layer on the substrate on at least top surfaces of the plurality of cavities;
• fusing a micro electro-mechanical system (MEMS) wafer to a top surface of the oxide layer;
• forming a patterned layer of germanium on the MEMS wafer;
• bonding a complementary metal-oxide-semiconductor (CMOS) wafer to the patterned germanium layer;
• and
• forming a Self-Assembling Monolayer (SAM) layer on the MEMS component, wherein the layer of SAM is present on top surfaces of the oxide layer and bottom surfaces of the MEMS wafer but not present on any portions of the patterned germanium layer.

A method, comprising:

• providing a substrate having a plurality of cavities formed on a top surface of the substrate;
• providing a micro electro-mechanical system (MEMS) layer on the top surface of the substrate;
• forming a MEMS component on the MEMS layer, the MEMS component comprising a layer of germanium and a plurality of MEMS actuators, wherein the MEMS component comprises the substrate having the plurality of cavities formed therein and an oxide layer formed on the substrate;
• bonding a complementary metal-oxide-semiconductor (CMOS) wafer to the MEMS component;
• and
• forming a Self-Assembling Monolayer (SAM) layer on the MEMS component, wherein the SAM layer is present on the plurality of MEMS actuators and surfaces of the oxide layer, but not present on the layer of germanium.