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AssigneeMears Technologies, Inc.
InventorsIlija Dukovski, Robert John Stephenson, Jean Augustin Chan Sow Fook Yiptong, Samed Halilov, Robert J. Mears, Xiangyang Huang, Marek Hytha
Estimating the term…
A method for making a semiconductor device which may include forming a first monocrystalline layer comprising a first material having a first lattice constant, a second monocrystalline layer including a second material having a second lattice constant different than the first lattice constant, and a lattice matching layer between the first and second monocrystalline layers and comprising a superlattice. More particularly, the superlattice may include a plurality of groups of layers, and each group of layers may include a plurality of stacked semiconductor monolayers defining a semiconductor base portion and at least one non-semiconductor monolayer thereon. Furthermore, the at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions, and at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween.
A method for making a semiconductor device comprising:
A method for making a semiconductor device comprising:
A method for making a semiconductor device comprising:
Dependencies are inferred from the claim text.