H10D 84/856
The complementary igfets having different architectures than each other
Official title: {the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS}
H10D84/856 (The complementary igfets having different architectures than each other) appears on 2,381 US grants and 2,804 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,381
- Published applications
- 2,804
- Assignees
- 382
- Inventors
- 3,771
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 4 | 0 |
| 1988 | 5 | 0 |
| 1989 | 9 | 0 |
| 1990 | 9 | 0 |
| 1991 | 9 | 0 |
| 1992 | 7 | 0 |
| 1993 | 10 | 0 |
| 1994 | 12 | 0 |
| 1995 | 17 | 0 |
| 1996 | 27 | 0 |
| 1997 | 28 | 0 |
| 1998 | 46 | 0 |
| 1999 | 45 | 0 |
| 2000 | 38 | 0 |
| 2001 | 13 | 10 |
| 2002 | 29 | 25 |
| 2003 | 19 | 23 |
| 2004 | 18 | 27 |
| 2005 | 24 | 36 |
| 2006 | 28 | 38 |
| 2007 | 25 | 55 |
| 2008 | 29 | 45 |
| 2009 | 35 | 43 |
| 2010 | 46 | 60 |
| 2011 | 58 | 42 |
| 2012 | 43 | 47 |
| 2013 | 41 | 67 |
| 2014 | 65 | 83 |
| 2015 | 135 | 198 |
| 2016 | 186 | 192 |
| 2017 | 162 | 167 |
| 2018 | 160 | 132 |
| 2019 | 142 | 124 |
| 2020 | 126 | 152 |
| 2021 | 114 | 157 |
| 2022 | 127 | 162 |
| 2023 | 104 | 194 |
| 2024 | 126 | 209 |
| 2025 | 155 | 265 |
| 2026 | 90 | 251 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Integrated circuit having multiple threshold voltages428US 9,362,180 B2Globalfoundries Inc. · 2016
- Integrated circuits with varying gate structures and fabrication methods425US 9,576,952 B2Globalfoundries Inc. · 2017
- Semiconductor device incorporating a multi-function layer into gate stacks418US 8,859,368 B2Globalfoundries Inc. · 2014
- Method of fabricating 3D multilayer semiconductor circuits338US 5,943,574 AMotorola, Inc. · 1999