Source/drain contact in stacked nanosheet fets

A semiconductor structure comprising:

• a first nanosheet transistor having a metal gate surrounding a set of nanosheets;
• a first and a second source/drain region at end surfaces of the set of nanosheets;
• and a first and a second set of inner spacers separating the first and the second source/drain region, respectively, from the metal gate;
• a first diffusion break adjacent to and separated from the first source/drain region by a third set of inner spacers;
• and
• a first frontside source/drain contact in contact with the first source/drain region, the first frontside source/drain contact having a lower portion below a top surface of the first source/drain region and horizontally between the first source/drain region and the first diffusion break.

A method of forming a semiconductor structure, comprising:

• forming a nanosheet transistor having a metal gate surrounding a set of nanosheets and a source/drain region at an end surface of the set of nanosheets;
• forming a diffusion break adjacent to and separated from the source/drain region by a set of inner spacers;
• and
• forming a frontside source/drain contact in contact with the source/drain region, the frontside source/drain contact having a lower portion at or below a top surface of the source/drain region and horizontally between the source/drain region and the diffusion break.