H10D 62/235
Of igfets
Official title: {of IGFETs (IGFETs having buried channels H10D30/637)}
H10D62/235 (Of igfets) appears on 5,597 US grants and 5,818 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,597
- Published applications
- 5,818
- Assignees
- 733
- Inventors
- 7,075
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 8 | 0 |
| 1979 | 7 | 0 |
| 1980 | 12 | 0 |
| 1981 | 15 | 0 |
| 1982 | 10 | 0 |
| 1983 | 7 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 7 | 0 |
| 1987 | 5 | 0 |
| 1988 | 5 | 0 |
| 1989 | 5 | 0 |
| 1990 | 14 | 0 |
| 1991 | 16 | 0 |
| 1992 | 10 | 0 |
| 1993 | 9 | 0 |
| 1994 | 15 | 0 |
| 1995 | 25 | 0 |
| 1996 | 31 | 0 |
| 1997 | 30 | 0 |
| 1998 | 50 | 0 |
| 1999 | 45 | 0 |
| 2000 | 62 | 0 |
| 2001 | 73 | 23 |
| 2002 | 65 | 59 |
| 2003 | 71 | 63 |
| 2004 | 69 | 81 |
| 2005 | 39 | 102 |
| 2006 | 64 | 110 |
| 2007 | 70 | 107 |
| 2008 | 61 | 138 |
| 2009 | 73 | 115 |
| 2010 | 119 | 123 |
| 2011 | 103 | 122 |
| 2012 | 115 | 144 |
| 2013 | 124 | 161 |
| 2014 | 184 | 248 |
| 2015 | 271 | 387 |
| 2016 | 378 | 442 |
| 2017 | 426 | 410 |
| 2018 | 410 | 423 |
| 2019 | 456 | 484 |
| 2020 | 451 | 508 |
| 2021 | 442 | 406 |
| 2022 | 295 | 315 |
| 2023 | 277 | 279 |
| 2024 | 229 | 253 |
| 2025 | 215 | 199 |
| 2026 | 118 | 116 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device6 Oct 2026US 12,757,434 B2Samsung Electronics Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,459 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic devices, and related methods and memory devices8 Oct 2026US 2026/0313897 A1Micron Technology, Inc.
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Stress liner integration in memory devices8 Oct 2026US 2026/0313991 A1Micron Technology, Inc.
- Gate structure for semiconductor device8 Oct 2026US 2026/0314023 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Semiconductor device having an SOI structure and manufacturing method therefor528US 6,127,702 ASemiconductor Energy Laboratory Co.Ltd. · 2000
- Tri-gate devices and methods of fabrication426US 6,858,478 B2Intel Corporation · 2005
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006