H10D 62/213
Channel regions of field-effect devices
Official title: {Channel regions of field-effect devices}
H10D62/213 (Channel regions of field-effect devices) appears on 6,447 US grants and 6,460 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,447
- Published applications
- 6,460
- Assignees
- 888
- Inventors
- 8,182
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 22 | 0 |
| 1978 | 19 | 0 |
| 1979 | 16 | 0 |
| 1980 | 27 | 0 |
| 1981 | 22 | 0 |
| 1982 | 15 | 0 |
| 1983 | 13 | 0 |
| 1984 | 11 | 0 |
| 1985 | 15 | 0 |
| 1986 | 17 | 0 |
| 1987 | 23 | 0 |
| 1988 | 20 | 0 |
| 1989 | 24 | 0 |
| 1990 | 28 | 0 |
| 1991 | 24 | 0 |
| 1992 | 19 | 0 |
| 1993 | 20 | 0 |
| 1994 | 42 | 0 |
| 1995 | 45 | 0 |
| 1996 | 49 | 0 |
| 1997 | 43 | 0 |
| 1998 | 70 | 0 |
| 1999 | 53 | 0 |
| 2000 | 69 | 0 |
| 2001 | 79 | 25 |
| 2002 | 74 | 70 |
| 2003 | 72 | 66 |
| 2004 | 72 | 86 |
| 2005 | 48 | 116 |
| 2006 | 69 | 120 |
| 2007 | 78 | 128 |
| 2008 | 74 | 159 |
| 2009 | 86 | 130 |
| 2010 | 139 | 136 |
| 2011 | 118 | 142 |
| 2012 | 126 | 159 |
| 2013 | 141 | 191 |
| 2014 | 211 | 285 |
| 2015 | 313 | 442 |
| 2016 | 426 | 475 |
| 2017 | 464 | 444 |
| 2018 | 451 | 471 |
| 2019 | 497 | 522 |
| 2020 | 474 | 541 |
| 2021 | 466 | 433 |
| 2022 | 321 | 348 |
| 2023 | 303 | 321 |
| 2024 | 250 | 279 |
| 2025 | 242 | 229 |
| 2026 | 132 | 142 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device6 Oct 2026US 12,757,434 B2Samsung Electronics Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- Semiconductor device and method of fabricating the same6 Oct 2026US 12,757,459 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic devices, and related methods and memory devices8 Oct 2026US 2026/0313897 A1Micron Technology, Inc.
- Semiconductor device including ferroelectric material film and method for fabricating a semiconductor device8 Oct 2026US 2026/0313906 A1Samsung Electronics Co., Ltd.
- Stress liner integration in memory devices8 Oct 2026US 2026/0313991 A1Micron Technology, Inc.
- Gate structure for semiconductor device8 Oct 2026US 2026/0314023 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor structures and methods with high mobility and high energy bandgap materials544US 8,836,016 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Semiconductor device having an SOI structure and manufacturing method therefor528US 6,127,702 ASemiconductor Energy Laboratory Co.Ltd. · 2000
- Carrier channel with element concentration gradient distribution and fabrication method thereof520US 9,196,483 B1National Tsing Hua University · 2015
- Tri-gate devices and methods of fabrication426US 6,858,478 B2Intel Corporation · 2005