H10D 62/335
Of charge-coupled devices
Official title: {of charge-coupled devices}
H10D62/335 (Of charge-coupled devices) appears on 124 US grants and 11 published applications in this corpus.
Search patents in H10D- Granted patents
- 124
- Published applications
- 11
- Assignees
- 45
- Inventors
- 156
- Latest grant
- 1 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 12 | 0 |
| 1977 | 16 | 0 |
| 1978 | 9 | 0 |
| 1979 | 4 | 0 |
| 1980 | 9 | 0 |
| 1981 | 5 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 5 | 0 |
| 1986 | 5 | 0 |
| 1987 | 2 | 0 |
| 1988 | 6 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 7 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 2 |
| 2019 | 2 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 1 |
| 2023 | 1 | 2 |
| 2024 | 2 | 2 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Gate-all-around integrated circuit structures having dual nanoribbon channel structures1 Jul 2025US 12,349,411 B2Intel Corporation
- Memory device having 2-transistor vertical memory cell and conductive shield structure28 Jan 2025US 12,213,321 B2Micron Technology, Inc.
- Memory device having 2-transistor vertical memory cell and wrapped data line structure2 Apr 2024US 11,950,426 B2Micron Technology, Inc.
- Gate-all-around integrated circuit structures having dual nanoribbon channel structures2 Jan 2024US 11,862,703 B2Intel Corporation
- Memory device having 2-transistor vertical memory cell and wrapped data line structure28 Mar 2023US 11,616,073 B1Micron Technology, Inc.
- Memory device having 2-transistor vertical memory cell and conductive shield structure24 Jul 2025US 2025/0240971 A1Micron Technology, Inc.
- Memory device having 2-transistor vertical memory cell and wrapped data line structure25 Jul 2024US 2024/0251563 A1Micron Technology, Inc.
- Gate-all-around integrated circuit structures having dual nanoribbon channel structures14 Mar 2024US 2024/0088253 A1Intel Corporation
- Memory device having 2-transistor vertical memory cell and wrapped data line structure27 Jul 2023US 2023/0240077 A1Micron Technology, Inc.
- Memory device having 2-transistor vertical memory cell and conductive shield structure4 May 2023US 2023/0138322 A1Micron Technology, Inc.
Most cited
By later US patents
- Color responsive imaging device employing wavelength dependent semiconductor optical absorption115US 4,613,895 AEastman Kodak Company · 1986
- Method of manufacturing a semiconductor device having silicon islands101US 5,466,621 AHitachi, Ltd. · 1995
- Method for manufacturing a semiconductor device and a semiconductor memory device79US 5,346,834 AHitachi, Ltd. · 1994
- Solid-state imaging device with internal smear eliminator68US 5,463,232 AKabushiki Kaisha Toshiba · 1995
- Semiconductor device and semiconductor memory device56US 5,115,289 AHitachi, Ltd. · 1992