H10D 62/17
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified
Official title: Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
H10D62/17 (Semiconductor regions connected to electrodes not carrying current to be rectified, amplified) appears on 19,165 US grants and 20,822 published applications in this corpus.
Search patents in H10D- Granted patents
- 19,165
- Published applications
- 20,822
- Assignees
- 1,719
- Inventors
- 17,672
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 31 | 0 |
| 1977 | 44 | 0 |
| 1978 | 38 | 0 |
| 1979 | 29 | 0 |
| 1980 | 47 | 0 |
| 1981 | 46 | 0 |
| 1982 | 34 | 0 |
| 1983 | 30 | 0 |
| 1984 | 35 | 0 |
| 1985 | 44 | 0 |
| 1986 | 55 | 0 |
| 1987 | 72 | 0 |
| 1988 | 59 | 0 |
| 1989 | 76 | 0 |
| 1990 | 79 | 0 |
| 1991 | 76 | 0 |
| 1992 | 76 | 0 |
| 1993 | 72 | 0 |
| 1994 | 112 | 0 |
| 1995 | 135 | 0 |
| 1996 | 150 | 0 |
| 1997 | 127 | 0 |
| 1998 | 202 | 0 |
| 1999 | 185 | 0 |
| 2000 | 178 | 0 |
| 2001 | 202 | 85 |
| 2002 | 192 | 209 |
| 2003 | 223 | 227 |
| 2004 | 245 | 277 |
| 2005 | 202 | 335 |
| 2006 | 219 | 363 |
| 2007 | 234 | 381 |
| 2008 | 219 | 447 |
| 2009 | 273 | 420 |
| 2010 | 395 | 415 |
| 2011 | 379 | 492 |
| 2012 | 415 | 596 |
| 2013 | 523 | 689 |
| 2014 | 698 | 884 |
| 2015 | 948 | 1207 |
| 2016 | 1161 | 1366 |
| 2017 | 1315 | 1299 |
| 2018 | 1215 | 1252 |
| 2019 | 1297 | 1391 |
| 2020 | 1293 | 1365 |
| 2021 | 1143 | 1192 |
| 2022 | 941 | 1346 |
| 2023 | 884 | 1403 |
| 2024 | 931 | 1299 |
| 2025 | 1028 | 1166 |
| 2026 | 558 | 716 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 62/393Body regions of dmos transistors or igbts6,890
- H10D 62/213Channel regions of field-effect devices6,447
- H10D 62/351Substrate regions of field-effect devices5,037
- H10D 62/177Base regions of bipolar transistors1,555
- H10D 62/343Gate regions of field-effect devices having pn junction gates1,496
- H10D 62/192Base regions of thyristors221
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Most cited
By later US patents
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