H10D 62/393
Body regions of dmos transistors or igbts
Official title: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
H10D62/393 (Body regions of dmos transistors or igbts) appears on 6,890 US grants and 7,895 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,890
- Published applications
- 7,895
- Assignees
- 718
- Inventors
- 5,769
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 5 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 8 | 0 |
| 1987 | 14 | 0 |
| 1988 | 11 | 0 |
| 1989 | 17 | 0 |
| 1990 | 18 | 0 |
| 1991 | 16 | 0 |
| 1992 | 19 | 0 |
| 1993 | 20 | 0 |
| 1994 | 19 | 0 |
| 1995 | 36 | 0 |
| 1996 | 23 | 0 |
| 1997 | 23 | 0 |
| 1998 | 58 | 0 |
| 1999 | 59 | 0 |
| 2000 | 44 | 0 |
| 2001 | 55 | 35 |
| 2002 | 50 | 71 |
| 2003 | 74 | 77 |
| 2004 | 94 | 98 |
| 2005 | 63 | 84 |
| 2006 | 58 | 107 |
| 2007 | 64 | 110 |
| 2008 | 61 | 127 |
| 2009 | 85 | 169 |
| 2010 | 126 | 170 |
| 2011 | 150 | 204 |
| 2012 | 177 | 265 |
| 2013 | 224 | 263 |
| 2014 | 280 | 406 |
| 2015 | 410 | 512 |
| 2016 | 497 | 623 |
| 2017 | 545 | 586 |
| 2018 | 520 | 552 |
| 2019 | 568 | 598 |
| 2020 | 526 | 493 |
| 2021 | 417 | 398 |
| 2022 | 341 | 461 |
| 2023 | 280 | 436 |
| 2024 | 254 | 458 |
| 2025 | 328 | 378 |
| 2026 | 239 | 214 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Field effect transistor and method of its manufacture371US 6,429,481 B1Fairchild Semiconductor Corporation · 2002
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000