US 12,745,411 B2Granted

Semiconductor device

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorsYoko Iwakaji, Tomoko Matsudai, Ryohei Gejo

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Abstract

A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a second electrode, a third electrode, a first insulating film, and a third semiconductor layer of the first conductivity type. The first semiconductor layer is connected to the first electrode. The second semiconductor layer contacts the first semiconductor layer. The second electrode is connected to the second semiconductor layer. The first insulating film is located between the third electrode and the first semiconductor layer and between the third electrode and the second semiconductor layer. The third semiconductor layer is located between the first insulating film and the first semiconductor layer. The third semiconductor layer contacts the first insulating film and the first semiconductor layer. The third semiconductor layer has a higher carrier concentration than the first semiconductor layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a first electrode;
a first semiconductor layer connected to the first electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer contacting the first semiconductor layer, the second semiconductor layer being of a second conductivity type;
a second electrode connected to the second semiconductor layer;
a third electrode;
a first insulating film located between the third electrode and the first semiconductor layer and between the third electrode and the second semiconductor layer, the first insulating film contacting the third electrode;
a third semiconductor layer located between the first insulating film and the first semiconductor layer in a second direction orthogonal to a first direction, the first direction being from the first electrode toward the second electrode, the third semiconductor layer contacting the first insulating film and the first semiconductor layer, the third semiconductor layer being of the first conductivity type, the third semiconductor layer having a higher carrier concentration than the first semiconductor layer;
a fourth electrode;
a fourth semiconductor layer contacting the first electrode and the first semiconductor layer, the fourth semiconductor layer being of the second conductivity type;
a fifth semiconductor layer contacting the second electrode and the second semiconductor layer, the fifth semiconductor layer being of the first conductivity type;
and
a second insulating film located between the fourth electrode and the first semiconductor layer, between the fourth electrode and the second semiconductor layer, and between the fourth electrode and the fifth semiconductor layer, the second insulating film contacting the fourth electrode.

9 more elements

A semiconductor device, comprising:

a first electrode;
a first semiconductor layer connected to the first electrode, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer of a second conductivity type;
a second electrode connected to the second semiconductor layer;
a third electrode;
a first insulating film located between the third electrode and the first semiconductor layer and between the third electrode and the second semiconductor layer, the first insulating film contacting the third electrode;
and
a third semiconductor layer located between the first insulating film and the first semiconductor layer and between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer contacting the first insulating film, the first semiconductor layer, and the second semiconductor layer, the third semiconductor layer being of the first conductivity type, the third semiconductor layer having a higher carrier concentration than the first semiconductor layer;
a fourth electrode;
a fourth semiconductor layer contacting the first electrode and the first semiconductor layer, the fourth semiconductor layer being of the second conductivity type;
a fifth semiconductor layer contacting the second electrode and the second semiconductor layer, the fifth semiconductor layer being of the first conductivity type;
and
a second insulating film located between the fourth electrode and the first semiconductor layer, between the fourth electrode and the second semiconductor layer, and between the fourth electrode and the fifth semiconductor layer, the second insulating film contacting the fourth electrode.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/242,844Filed 6 Sep 2023
Priority: JP 2023-04689323 Mar 2023
Published: US 2024/0322021 A126 Sep 2024
Granted: 22 Sep 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…
H10D 8/00
Diodes
H10D 62/393
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions: body regions of…
H10D 64/117
Field plates: recessed field plates, e.g. trench field plates or buried field plates