Cell structures of insulated gate bipolar transistor IGBT with a control gate and a carrier storage layer, and their manufacturing methods

A method for manufacturing a cell structure of an insulated gate bipolar transistor, IGBT, with a control gate and a carrier storage layer, comprising the steps of:

• forming an N-type drift layer with a first surface;
• forming an active region on the first surface of the N-type drift layer, wherein the active region is located on a second surface opposing the first surface, the active region comprises an N-type storage layer, a P-type body layer and an N-type doped layer, and the N-type storage layer, the P-type body layer and the N-type doped layer are sequentially formed from the first surface to the second surface;
• and
• forming at least three gate trench bodies from the second surface to the first surface along a first direction perpendicular to the first surface, wherein each of the at least three gate trench bodies extends to and contacts the N-type drift layer, and each of the at least three gate trench bodies is a gate trench or a control gate trench,
• wherein the gate trench has a sidewall that is in contact with the active region, and a sidewall of the control gate trench is in contact with the P-type body layer but not in contact with the N-type storage layer,
• wherein the sidewall of the control gate trench extends from the second surface to the first surface along the first direction perpendicular to the first surface, and sequentially contacts the P-type body layer and the N-type drift layer, and the sidewall of the gate trench extends from the second surface to the first surface along the first direction perpendicular to the first surface, and sequentially contacts the N-type doped layer, the P-type body layer, the N-type storage layer, and the N-type drift layer,
• wherein when the at least three gate trench bodies are three gate trench bodies, the three gate trench bodies comprise two gate trenches and one control gate trench, the two gate trenches and the one control gate trench are arranged in a manner of gate trench-control gate trench-gate trench along a second direction parallel to the first surface and perpendicular to the first direction, and are spaced apart by the P-type body layer, and a distance between adjacent sidewalls of one of the gate trenches and the one control gate trench minus a width of the N-type storage layer between the gate trench and the one control gate trench is in the range of 0.2 um to 1 um.