H10D 62/177
Base regions of bipolar transistors
Official title: {Base regions of bipolar transistors, e.g. BJTs or IGBTs}
H10D62/177 (Base regions of bipolar transistors) appears on 1,555 US grants and 1,369 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,555
- Published applications
- 1,369
- Assignees
- 360
- Inventors
- 1,979
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 9 | 0 |
| 1978 | 11 | 0 |
| 1979 | 4 | 0 |
| 1980 | 11 | 0 |
| 1981 | 10 | 0 |
| 1982 | 7 | 0 |
| 1983 | 3 | 0 |
| 1984 | 9 | 0 |
| 1985 | 11 | 0 |
| 1986 | 8 | 0 |
| 1987 | 11 | 0 |
| 1988 | 15 | 0 |
| 1989 | 11 | 0 |
| 1990 | 9 | 0 |
| 1991 | 16 | 0 |
| 1992 | 15 | 0 |
| 1993 | 14 | 0 |
| 1994 | 19 | 0 |
| 1995 | 18 | 0 |
| 1996 | 28 | 0 |
| 1997 | 17 | 0 |
| 1998 | 13 | 0 |
| 1999 | 15 | 0 |
| 2000 | 17 | 0 |
| 2001 | 10 | 9 |
| 2002 | 18 | 27 |
| 2003 | 17 | 32 |
| 2004 | 40 | 44 |
| 2005 | 34 | 42 |
| 2006 | 38 | 26 |
| 2007 | 22 | 32 |
| 2008 | 13 | 27 |
| 2009 | 25 | 14 |
| 2010 | 26 | 14 |
| 2011 | 17 | 26 |
| 2012 | 16 | 28 |
| 2013 | 30 | 51 |
| 2014 | 34 | 46 |
| 2015 | 78 | 96 |
| 2016 | 100 | 119 |
| 2017 | 115 | 96 |
| 2018 | 96 | 86 |
| 2019 | 105 | 113 |
| 2020 | 98 | 80 |
| 2021 | 76 | 74 |
| 2022 | 55 | 57 |
| 2023 | 66 | 90 |
| 2024 | 70 | 49 |
| 2025 | 31 | 53 |
| 2026 | 20 | 38 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Heterojunction bipolar transistor and base-collector grade layer29 Sep 2026US 12,751,024 B2National Taiwan University
- Semiconductor device having multiple electrostatic discharge (ESD) paths22 Sep 2026US 12,745,465 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bipolar transistor structures with cavity below extrinsic base and methods to form same15 Sep 2026US 12,740,113 B2GLOBALFOUNDRIES U. S. Inc.
- Transient voltage suppressor structure having multiple discharging paths15 Sep 2026US 12,740,156 B2Amazing Microelectronic Corp.
- Semiconductor device with a monocrystalline extrinsic base and method therefor21 Jul 2026US 12,690,207 B2NXP B. V.
- Iii-v heterojunction bipolar transistor and its manufacturing method1 Oct 2026US 2026/0304809 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar Junction Transistors Including Embedded Base Superlattice And Related Methods13 Aug 2026US 2026/0239639 A1Atomera Incorporated
- Lateral transistors6 Aug 2026US 2026/0231451 A1GLOBALFOUNDRIES U. S. Inc.
- Structure with spacer on intrinsic base pedestal and related methods6 Aug 2026US 2026/0231488 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- High voltage semiconductor device381US 4,754,310 AU. S. Philips Corporation · 1988
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Active matrix using hybrid integrated circuit and bipolar transistor272US 8,906,755 B1International Business Machines Corporation · 2014