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US 2026/0271357 A1Published application
Lateral heterojunction bipolar transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsJacob Matthew DeAngelis, Uppili Srinivasan Raghunathan, Steven M. Shank, John J. Pekarik
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to lateral heterojunction bipolar transistors and methods of manufacture. The structure includes: a base region; a collector region on a first side of the base region; and an emitter region on a second side of the base region, wherein the collector region and the emitter region are above, below and laterally symmetrical about the base region.
Claims20
A structure comprising:
- a base region;
- a collector region on a first side of the base region;
- and
- an emitter region on a second side of the base region,
- wherein the collector region and the emitter region are above, below and laterally symmetrical about the base region.
2 more elements
A structure comprising:
- a base region comprising an intrinsic base region and an extrinsic base region;
- a collector region on a first side of the base region;
- and
- an emitter region on a second side of the base region,
- wherein the collector region and the emitter region laterally and vertically overlap with the base region.
2 more elements
A method comprising:
- forming a base region;
- forming a collector region on a first side of the base region;
- and
- forming an emitter region on a second side of the base region,
- wherein the collector region and the emitter region are formed above, below and laterally symmetrical about the base region.
2 more elements
Dependencies are inferred from the claim text.