H10D 62/184
Of lateral bjts
Official title: {of lateral BJTs}
H10D62/184 (Of lateral bjts) appears on 321 US grants and 321 published applications in this corpus.
Search patents in H10D- Granted patents
- 321
- Published applications
- 321
- Assignees
- 101
- Inventors
- 493
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 2 | 3 |
| 2003 | 0 | 2 |
| 2004 | 2 | 1 |
| 2005 | 2 | 4 |
| 2006 | 4 | 2 |
| 2007 | 2 | 2 |
| 2008 | 0 | 2 |
| 2009 | 0 | 1 |
| 2010 | 1 | 3 |
| 2011 | 3 | 5 |
| 2012 | 3 | 3 |
| 2013 | 4 | 7 |
| 2014 | 7 | 10 |
| 2015 | 21 | 30 |
| 2016 | 25 | 28 |
| 2017 | 39 | 28 |
| 2018 | 27 | 26 |
| 2019 | 27 | 26 |
| 2020 | 20 | 7 |
| 2021 | 12 | 14 |
| 2022 | 14 | 13 |
| 2023 | 27 | 53 |
| 2024 | 31 | 16 |
| 2025 | 10 | 23 |
| 2026 | 6 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Heterojunction bipolar transistor and base-collector grade layer29 Sep 2026US 12,751,024 B2National Taiwan University
- Bipolar transistor structures with cavity below extrinsic base and methods to form same15 Sep 2026US 12,740,113 B2GLOBALFOUNDRIES U. S. Inc.
- Super-β bipolar junction transistor and manufacturing method therefor26 May 2026US 12,641,839 B2Csmc Technologies Fab2 Co., Ltd.
- Semiconductor device5 May 2026US 12,622,006 B2Samsung Electronics Co., Ltd.
- Lateral bipolar transistor24 Mar 2026US 12,588,259 B2STMicroelectronics (Crolles 2) SAS
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Lateral transistors6 Aug 2026US 2026/0231451 A1GLOBALFOUNDRIES U. S. Inc.
- Semiconductor processing for bipolar junction transistor (bjt)25 Jun 2026US 2026/0181928 A1
- Semiconductor device11 Jun 2026US 2026/0164687 A1Samsung Electronics Co., Ltd.
- Semiconductor device28 May 2026US 2026/0150660 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Transverse ultra-thin insulated gate bipolar transistor having high current density189US 9,240,469 B2Southeast University · 2016
- High speed lateral bipolar transistor42US 4,259,680 ABell Telephone Laboratories, Incorporated · 1981
- Semiconductor power device integrated with temperature protection means42US 4,903,106 AMitsubishi Denki Kabushiki Kaisha · 1990
- Base for a NPN bipolar transistor42US 6,822,314 B2Intersil Americas Inc. · 2004
- Method of forming lateral bipolar transistors38US 4,419,150 ARockwell International Corporation · 1983