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US 6,822,314 B2Granted
Base for a NPN bipolar transistor
AssigneeIntersil Americas Inc.
InventorJames D. Beasom
Life of this patent
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Abstract
An improved base for a NPN bipolar transistor. The base region is formed with Boron and Indium dopants for improved beta early voltage product and reduced base resistance.
Claims13
A base region for a NPN transistor, the base region comprising:
- Boron dopants;
- and
- Indium dopants, wherein the Boron and Indium dopants form the base region of P conductivity type, wherein the concentration of Indium dopants is greater than the concentration of Boron dopants at a base-collector junction.
A NPN transistor comprising:
- a collector of a N conductivity type formed in a substrate, the substrate having a working surface,
- a base of a P conductivity type formed in the collector adjacent the working surface of the substrate, wherein the P conductivity type is formed with both Boron and Indium dopants;
- an emitter of the N conductivity type formed in the base adjacent the working surface of the substrate, wherein the concentration of Boron dopants is greater than the concentration of Indium dopants at an emitter-base junction;
- and
- wherein the concentration of Indium dopants is greater than the concentration of Boron dopants at a base-collector junction.
2 more elements
A base region for a NPN transistor, the base region comprising:
- Boron dopants;
- Indium dopants, wherein the ratio of Indium dopants to Boron dopants is selected to create a desired current gain temperature coefficient;
- wherein the concentration of Boron dopants is greater than the concentration of Indium dopants adjacent an emitter-base junction to set base resistance with the Boron dopants;
- and
- wherein the concentration of Indium dopants is greater than the concentration of Boron dopants adjacent a base-collector junction to achieve relatively high early voltage.
2 more elements
Dependencies are inferred from the claim text.