High speed lateral bipolar transistor
AssigneeBell Telephone Laboratories, Incorporated
InventorsMartin P. Lepselter, Simon M. Sze
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Abstract
A bipolar transistor NPN structure (20) is constructed at a major surface of a silicon body with a P-type polycrystalline silicon electrode (13) contacting a P-type base zone (13.6). Excess acceptor impurities from the polycrystalline silicon electrode (13) are diffused into the base zone (13.6) in order to tailor its conductivity profile.
Claims9
Semiconductor apparatus comprising a lateral bipolar transistor device structure in a semiconductive, single crystal silicon layer (10) of essentially moderate, first type conductivity having a pair of spaced apart localized zones (10.1, 10.2) of second, opposite conductivity type forming, respectively, an emitter and a collector zone of said transistor at a major surface thereof is CHARACTERIZED BY a polycrystalline silicon electrode layer (13) of said first type conductivity located contiguous with a portion of the major surface of said single crystal silicon layer (10) in the space between said localized zones (10.1, 10.2), said polycrystalline electrode layer (13) serving as the base electrode contact of said transistor device, and a base zone (13.5) of said first type conductivity higher than said moderate conductivity extending in said silicon layer (10) from one of said localized zones (10.1, 10.2) to the other, said base zone (13.6) formed by diffusion of impurities from said polycrystalline layer (13) into a portion of single crystal layer (10) underlying said polycrystalline layer (13).
Semiconductor apparatus including a transistor device comprising:
- (a) a single crystal semiconductive silicon layer of essentially relatively moderate one conductivity type;
- (b) first and second spaced apart metal-silicide electrodes located contiguous with first and second portions, respectively, of a major surface of said layer;
- (c) a polycrystalline silicon electrode layer of said one conductivity type located contiguous with a third portion of said major surface located in the space between said first and second portions;
- (d) first and second localized zones each of conductivity type opposite said one conductivity type located in said single crystal layer contiguous with said first and second portions, respectively, of said major surface;
- and
- (e) a third localized zone of said one conductivity type and of higher conductivity than said moderate conductivity located in said single crystal layer contiguous with the third portion of said major surface.
Dependencies are inferred from the claim text.