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US 12,690,207 B2Granted
Semiconductor device with a monocrystalline extrinsic base and method therefor
AssigneeNXP B.V.
InventorsLjubo Radic, Jay Paul John, James Albert Kirchgessner, Johannes Josephus Theodorus Marinus Donkers
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a collector region formed within the semiconductor substrate in a first semiconductor region having an upper surface and a collector sidewall, a base region disposed over the collector region, a seed region formed over the semiconductor substrate and coupled to the semiconductor substrate outside the base region, an extrinsic base region having an upper surface and formed over the seed region and electrically coupled to the base region, and an emitter region formed over the base region.
Claims18
A semiconductor device comprising:
- a semiconductor substrate;
- a collector region formed within the semiconductor substrate in a first semiconductor region, having an upper surface and a collector sidewall;
- a base region, disposed over the collector region;
- a seed region formed over the semiconductor substrate and coupled to the semiconductor substrate outside the base region, wherein a proximal portion of the seed region directly contacts an upper surface of a monocrystalline portion of the semiconductor substrate, wherein the proximal portion of the seed region in contact with the semiconductor substrate has a first length and a distal portion of the seed region directly over the proximal portion has a second length, wherein the first length is less than the second length;
- a dielectric region formed over at least a portion of the first semiconductor region and over a portion the collector sidewall, wherein a portion of the dielectric region separates the base region from the seed region;
- an extrinsic base region having an upper surface and formed over and coupled to the distal portion of the seed region and electrically coupled to the base region;
- and
- an emitter region formed over the base region.
5 more elements
A bipolar transistor device comprising:
- a semiconductor substrate;
- a first isolation region formed within the semiconductor substrate;
- a collector region formed laterally adjacent the first isolation region within the semiconductor substrate in a first semiconductor region, having an upper surface and a collector sidewall;
- a base region disposed over the collector region;
- a dielectric region formed over at least a portion of the semiconductor substrate and over the collector sidewall;
- a seed region formed over the semiconductor substrate within a seed opening in the dielectric region and coupled to the semiconductor substrate outside the base region, wherein a proximal portion of the seed region directly contacts an upper surface of a monocrystalline portion of the semiconductor substrate, wherein the proximal portion of the seed region in contact with the semiconductor substrate has a first length and a distal portion of the seed region directly over the proximal portion has a second length, wherein the first length is less than the second length,
- wherein a portion of the dielectric region separates the base region from the seed region;
- an extrinsic base region formed over the seed region, the extrinsic base region having a first portion formed between and laterally adjacent the distal portion of the seed region and the base region, wherein at least a portion of the extrinsic base region is monocrystalline and wherein a monocrystalline portion of the extrinsic base is electrically coupled to the base region;
- and
- an emitter region formed over the base region.
7 more elements
A method of forming a bipolar transistor device, the method comprising:
- forming a semiconductor substrate;
- forming an isolation region within the semiconductor substrate;
- forming a collector region laterally adjacent the isolation region within the semiconductor substrate in a first semiconductor region, wherein the collector region includes an upper surface and a collector sidewall;
- forming a base region over the collector region;
- forming a dielectric region over at least a portion of the semiconductor substrate and over the collector sidewall;
- forming a seed region over the semiconductor substrate within a seed opening in the dielectric region and coupled to the semiconductor substrate outside the base region, wherein a proximal portion of the seed region directly contacts an upper surface of a monocrystalline portion of the semiconductor substrate, and wherein the proximal portion of the seed region in contact with the semiconductor substrate has a first length and a distal portion of the seed region directly over the proximal portion has a second length, wherein the first length is less than the second length,
- wherein a portion of the dielectric region separates the base region from the seed region;
- forming an extrinsic base region over and coupled to the distal portion of the seed region having a first portion formed between and laterally adjacent the seed region and the base region, wherein at least a portion of the extrinsic base region is monocrystalline;
- and
- forming an emitter region over the base region.
7 more elements
Dependencies are inferred from the claim text.