Semiconductor device having multiple electrostatic discharge (ESD) paths

A semiconductor device, comprising:

• a first doped region of a first conductivity type, wherein the first doped region is coupled to an input/output (I/O) pad and is a first terminal of a first diode;
• and
• a second doped region of a second conductivity type, wherein the second doped region is coupled to a first voltage terminal and is a first terminal of a second diode;
• and
• wherein the first to second diodes are configured to transmit a first electrostatic discharge (ESD) current flowing between the first and second doped regions.

A semiconductor device, comprising:

• at least one first doped region and a second doped region that are in a first well, wherein the at least one first doped region is coupled to a first voltage terminal and the second doped region is coupled to an input/output (I/O) pad;
• and
• a third doped region that is in a second well, wherein the third doped region is coupled to the I/O pad,
• wherein the at least one first doped region and the third doped region are configured as a latchup current path.