H10D 62/192
Base regions of thyristors
Official title: {Base regions of thyristors}
H10D62/192 (Base regions of thyristors) appears on 221 US grants and 118 published applications in this corpus.
Search patents in H10D- Granted patents
- 221
- Published applications
- 118
- Assignees
- 85
- Inventors
- 303
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 1 | 0 |
| 1981 | 9 | 0 |
| 1982 | 3 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 6 | 0 |
| 1986 | 10 | 0 |
| 1987 | 8 | 0 |
| 1988 | 4 | 0 |
| 1989 | 7 | 0 |
| 1990 | 7 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 0 | 0 |
| 1994 | 6 | 0 |
| 1995 | 4 | 0 |
| 1996 | 6 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 5 | 0 |
| 2000 | 4 | 0 |
| 2001 | 2 | 4 |
| 2002 | 4 | 7 |
| 2003 | 6 | 3 |
| 2004 | 7 | 2 |
| 2005 | 2 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 3 |
| 2008 | 0 | 2 |
| 2009 | 2 | 2 |
| 2010 | 2 | 1 |
| 2011 | 0 | 2 |
| 2012 | 2 | 6 |
| 2013 | 2 | 6 |
| 2014 | 6 | 3 |
| 2015 | 9 | 10 |
| 2016 | 5 | 8 |
| 2017 | 8 | 6 |
| 2018 | 7 | 10 |
| 2019 | 7 | 4 |
| 2020 | 5 | 6 |
| 2021 | 4 | 5 |
| 2022 | 6 | 6 |
| 2023 | 5 | 7 |
| 2024 | 6 | 10 |
| 2025 | 4 | 3 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Insulated gate turn-off device with short channel PMOS transistor3 Mar 2026US 12,568,666 B2Pakal Technologies, Inc.
- Bidirectional thyristor device with asymmetric characteristics9 Dec 2025US 12,495,565 B2Hitachi Energy Ltd
- Reverse conducting power semiconductor device and method for manufacturing the same23 Sep 2025US 12,426,349 B2Hitachi Energy Ltd
- Substrate-less silicon controlled rectifier (SCR) integrated circuit structures10 Jun 2025US 12,328,947 B2Intel Corporation
- Method of making isolation structure thyristor16 Apr 2026US 2026/0107487 A1Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Substrate-less silicon controlled rectifier (scr) integrated circuit structures14 Aug 2025US 2025/0261452 A1Intel Corporation
- Insulated trench gate with multiple layers form improved performance of semiconductor devices30 Jan 2025US 2025/0040229 A1Pakal Technologies, Inc.
- Semiconductor device and method for operating a semiconductor device9 Jan 2025US 2025/0015172 A1Hitachi Energy Ltd
- Triac gate design for commutation sensitivity trade off improvement5 Dec 2024US 2024/0405111 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000
- Parallel-stripe type semiconductor device126US 6,294,818 B1Fuji Electric Co., Ltd. · 2001
- PNPN Semiconductor switches77US 4,244,000 ANippon Telegraph & Telephone Public Corporation · 1981
- Etching method for generating apertured openings or trenches in layers or substrates composed of n-doped silicon53US 4,874,484 ASiemens Aktiengesellschaft · 1989
- MOS-controlled thyristor34US 5,324,966 ATakashige Tamamushi · 1994