Method of making isolation structure thyristor
AssigneeLittelfuse Semiconductor (Wuxi) Co., Ltd.
InventorsJifeng Zhou, Xingchong Gu, Lei He
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Abstract
A thyristor semiconductor includes a first layer, located on a first surface of a substrate, where the first layer is a first P layer. A second layer, located on a second surface of the substrate, is a second P layer. The second surface is opposite the first surface. A third layer is located between the first layer and the substrate. An isolation region is located along an edge of the substrate The isolation region is adjacent the second P layer. An emitter, next to the third layer, is connected to a cathode.
Claims20
A thyristor semiconductor, comprising:
- a first layer, disposed on a first surface of a substrate, comprising a first P layer;
- a second layer, disposed on a second surface of the substrate, opposite the first surface, comprising a second P layer;
- a third layer, disposed between the first layer and the substrate;
- an isolation region, disposed along an edge of the substrate, wherein the isolation region is coupled to the second P layer;
- and
- an emitter, disposed adjacent the first P layer, wherein the emitter is coupled to a cathode.
A method of forming a thyristor semiconductor, comprising:
- providing an N− substrate;
- forming a first layer in a first region above the N− substrate and simultaneously in a second region below the N− substrate by:
- performing P type isolation photo resist and diffusion;
- and
- performing P− base gallium diffusion simultaneously on the first region and the second region;
- and
- performing a grinding operation to the second region to remove P− from the second region.
A method of forming a thyristor semiconductor, comprising:
- providing an N− substrate;
- forming a first layer in a first region above the N− substrate and simultaneously in a second region below the N− substrate by performing P type isolation photo resist and diffusion;
- performing P− base boron diffusion in the first region;
- performing P base diffusion in the first region and the second region.
Dependencies are inferred from the claim text.