H10D 62/199
Anode base regions of thyristors
Official title: {Anode base regions of thyristors}
H10D62/199 (Anode base regions of thyristors) appears on 69 US grants and 43 published applications in this corpus.
Search patents in H10D- Granted patents
- 69
- Published applications
- 43
- Assignees
- 46
- Inventors
- 118
- Latest grant
- 10 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 3 |
| 2002 | 4 | 1 |
| 2003 | 2 | 1 |
| 2004 | 2 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 2 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 2 | 5 |
| 2013 | 1 | 4 |
| 2014 | 3 | 0 |
| 2015 | 5 | 4 |
| 2016 | 4 | 2 |
| 2017 | 4 | 3 |
| 2018 | 2 | 4 |
| 2019 | 2 | 1 |
| 2020 | 2 | 2 |
| 2021 | 1 | 1 |
| 2022 | 0 | 1 |
| 2023 | 1 | 2 |
| 2024 | 1 | 4 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Substrate-less silicon controlled rectifier (SCR) integrated circuit structures10 Jun 2025US 12,328,947 B2Intel Corporation
- Semiconductor devices and methods of manufacturing semiconductor devices22 Apr 2025US 12,284,834 B2Semiconductor Components Industries, LLC
- Semiconductor devices and methods of manufacturing semiconductor devices10 Sep 2024US 12,087,760 B2Semiconductor Components Industries, LLC
- Thyristor11 Jul 2023US 11,699,745 B2Macronix International Co., Ltd.
- Thyristor volatile random access memory and methods of manufacture7 Sep 2021US 11,114,438 B2TC Lab, Inc.
- Substrate-less silicon controlled rectifier (scr) integrated circuit structures14 Aug 2025US 2025/0261452 A1Intel Corporation
- Semiconductor devices and methods of manufacturing semiconductor devices21 Nov 2024US 2024/0387510 A1Semiconductor Components Industries, LLC
- Conductivity-controlled power semiconductor device14 Nov 2024US 2024/0379779 A1Board of Regents, The University of Texas System
- Method of peak on-state voltage reduction for semiconductor device fabrication29 Aug 2024US 2024/0290828 A1Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Gate-commuted thyristor cell with a base region having a varying thickness16 May 2024US 2024/0162295 A1Hitachi Energy Ltd
Most cited
By later US patents
- MOS-controlled thyristor34US 5,324,966 ATakashige Tamamushi · 1994
- Conductivity modulated semiconductor structure26US 4,694,313 AHarris Corporation · 1987
- High switching speed P-N junction devices with recombination means centrally located in high resistivity layer23US 4,259,683 AGeneral Electric Company · 1981
- Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device20US 4,782,379 AGeneral Electric Company · 1988
- Metal oxide semiconductor gated turn-off thyristor including a low lifetime region19US 4,982,258 AGeneral Electric Company · 1991