Conductivity-controlled power semiconductor device

A power semiconductor device comprising:

• one or more conductivity-controlled devices comprising one or more conductivity-controlled diodes, one or more conductivity-controlled transistors or thyristors, or one or more conductivity-controlled FET-based devices, wherein each of the one or more conductivity-controlled devices comprises
• a set of terminals including at least a first terminal, a second terminal, and a conductivity-controlled terminal;
• a first semiconductor region having a first doping polarity material that is coupled to the first terminal;
• a second semiconductor region having a second doping polarity material (i) in contact with the first semiconductor region and (ii) is coupled to the second terminal, the first and second semiconductor regions being configured to generate an electric field opposite in direction to electron flow, or the same direction of hole flow, when a voltage is applied;
• and
• a third semiconductor region having a third doping polarity material that is opposite in doping polarity material to a doped region comprising either one of the first doping polarity material or the second doping polarity material, the third semiconductor region being coupled to the conductivity-controlled terminal to generate, when energized, a second electric field that reduces the resistance of the first and second semiconductor regions.