Conductivity modulated semiconductor structure
AssigneeHarris Corporation
InventorJames D. Beasom
Life of this patent
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Abstract
An insulated gate field effect transistor having a minority carrier diode and a majority carrier diode formed in the drain region. The minority diode modulates the resistance of the drain while the majority diode decreases sensitivity to latch up. Alternatively, a minority diode only is formed in the drain and separated from the drain contact and source by the body and body contact. An improved SCR is formed using the two diode structures as the fourth layer. An improved diode can also be formed having both low turn-on and low series resistance.
Claims33
An insulated gate field effect transistor comprising:
- source and drain regions of a first conductivity type separated by a body region of a second conductivity type;
- a gate over a portion of said body region between said source and drain regions and separated from said body by an insulation layer;
- and
- a minority carrier diode and a majority carrier diode both formed with said drain region in series with a PN junction formed by said drain and body regions.
An insulated gate field effect transistor comprising:
- source and drain regions of a first conductivity type separated by a body region of a second conductivity type;
- a gate over a channel portion of said body region between said source and drain regions and separated from said body by an insulation layer;
- a drain contact in said drain region adjacent said channel;
- and
- a minority carrier diode in said drain region in series with a PN junction formed by said drain and body regions and laterally separated from said drain contact by said body region.
A silicon controlled rectifier comprising:
- a first region of a first conductivity type formed in a second region of a second conductivity type;
- said second region being in a third region of said first conductivity type;
- a minority carrier diode and a majority carrier diode both being formed with said third region in a series with a PN junction formed by said second and third regions;
- and
- said first, second and third regions and said majority carrier diode forming said silicon controlled rectifier.
A diode comprising:
- a first region of a first conductivity type;
- a contact region of a first conductivity type in said first region;
- a minority carrier diode and a majority carrier diode formed with said first region,
- means for applying an input signal to said majority carrier diode and a modulation signal to said minority carrier diode.
A diode comprising:
- a first region of a first conductivity type;
- a contact region of a first conductivity type in said first region;
- a minority carrier diode and a majority carrier diode formed with said first region,
- one of said diodes is an input diode and the other of said diodes is a modulation diode and at least a portion of said modulation diode is positioned in said first region between said input diode and said contact region.
Dependencies are inferred from the claim text.