H10D 62/351
Substrate regions of field-effect devices
Official title: {Substrate regions of field-effect devices}
H10D62/351 (Substrate regions of field-effect devices) appears on 5,037 US grants and 5,475 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,037
- Published applications
- 5,475
- Assignees
- 756
- Inventors
- 6,781
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 5 | 0 |
| 1978 | 2 | 0 |
| 1979 | 4 | 0 |
| 1980 | 5 | 0 |
| 1981 | 7 | 0 |
| 1982 | 3 | 0 |
| 1983 | 5 | 0 |
| 1984 | 5 | 0 |
| 1985 | 5 | 0 |
| 1986 | 9 | 0 |
| 1987 | 14 | 0 |
| 1988 | 11 | 0 |
| 1989 | 14 | 0 |
| 1990 | 23 | 0 |
| 1991 | 14 | 0 |
| 1992 | 21 | 0 |
| 1993 | 20 | 0 |
| 1994 | 31 | 0 |
| 1995 | 41 | 0 |
| 1996 | 58 | 0 |
| 1997 | 52 | 0 |
| 1998 | 80 | 0 |
| 1999 | 70 | 0 |
| 2000 | 59 | 0 |
| 2001 | 77 | 21 |
| 2002 | 62 | 68 |
| 2003 | 80 | 81 |
| 2004 | 67 | 68 |
| 2005 | 68 | 103 |
| 2006 | 73 | 128 |
| 2007 | 78 | 120 |
| 2008 | 81 | 155 |
| 2009 | 87 | 132 |
| 2010 | 121 | 128 |
| 2011 | 116 | 149 |
| 2012 | 132 | 167 |
| 2013 | 167 | 193 |
| 2014 | 193 | 212 |
| 2015 | 221 | 269 |
| 2016 | 266 | 299 |
| 2017 | 304 | 302 |
| 2018 | 258 | 255 |
| 2019 | 284 | 302 |
| 2020 | 289 | 321 |
| 2021 | 259 | 269 |
| 2022 | 244 | 402 |
| 2023 | 216 | 439 |
| 2024 | 263 | 359 |
| 2025 | 326 | 339 |
| 2026 | 146 | 194 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device6 Oct 2026US 12,757,435 B2Rohm Co., Ltd.
- MOSFET and memory cell having improved drain current through back bias application6 Oct 2026US 12,757,460 B2Zeno Semiconductor, Inc.
- Field effect transistor6 Oct 2026US 12,757,736 B2OOKUMA DIAMOND DEVICE Inc.
- Compound semiconductor substrate and compound semiconductor device comprising a Si substrate a SiC layer, nitride semiconductor layers, an electronic traveling layer, and a barrier layer29 Sep 2026US 12,751,033 B2Air Water Inc.
- Gate-all-around integrated circuit structures having fin stack isolation22 Sep 2026US 12,745,416 B2Intel Corporation
- Embedded semiconductor region for latch-up susceptibility improvement8 Oct 2026US 2026/0314060 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistor structures with interleaved body contacts and gate contacts1 Oct 2026US 2026/0304873 A1GLOBALFOUNDRIES U. S. Inc.
- Fin loss prevention1 Oct 2026US 2026/0304913 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including gate structure and multiple integrated separation structures24 Sep 2026US 2026/0293208 A1Samsung Electronics Co., Ltd.
- Profile controlof epitaxial structures in semiconductor devices24 Sep 2026US 2026/0293247 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor device and method355US 10,510,871 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Uniformity tuning of variable-height features formed in trenches349US 10,332,963 B1Globalfoundries Inc. · 2019
- Complementary, isolated DMOS IC technology319US 5,156,989 ASiliconix Incorporated · 1992
- Si-Ge CMOS semiconductor device268US 6,271,551 B1U. S. Philips Corporation · 2001