H10D 62/386
Of charge-coupled devices
Official title: {of charge-coupled devices}
H10D62/386 (Of charge-coupled devices) appears on 20 US grants and 8 published applications in this corpus.
Search patents in H10D- Granted patents
- 20
- Published applications
- 8
- Assignees
- 11
- Inventors
- 41
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 2 |
| 2022 | 1 | 1 |
| 2023 | 1 | 1 |
| 2024 | 1 | 1 |
| 2025 | 1 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate-all-around integrated circuit structures having fin stack isolation22 Sep 2026US 12,745,416 B2Intel Corporation
- Gate-all-around integrated circuit structures having insulator fin on insulator substrate29 Apr 2025US 12,288,813 B2Intel Corporation
- Gate-all-around integrated circuit structures having insulator FIN on insulator substrate2 Jan 2024US 11,862,702 B2Intel Corporation
- Gate-all-around integrated circuit structures having fin stack isolation28 Feb 2023US 11,594,637 B2Intel Corporation
- Gate-all-around integrated circuit structures having insulator fin on insulator substrate24 May 2022US 11,342,432 B2Intel Corporation
- Gate-all-around integrated circuit structures having insulator fin on insulator substrate10 Jul 2025US 2025/0227959 A1Intel Corporation
- Gate-all-around integrated circuit structures having insulator fin on insulator substrate14 Mar 2024US 2024/0088254 A1Intel Corporation
- Gate-all-around integrated circuit structures having fin stack isolation25 May 2023US 2023/0163215 A1Intel Corporation
- Gate-all-around integrated circuit structures having insulator fin on insulator substrate4 Aug 2022US 2022/0246743 A1Intel Corporation
- Gate-all-around integrated circuit structures having insulator fin on insulator substrate30 Sep 2021US 2021/0305388 A1Intel Corporation
Most cited
By later US patents
- Bulk channel charge transfer device22US 4,012,759 AU. S. Philips Corporation · 1977
- Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor20US 4,208,668 ASiemens Aktiengesellschaft · 1980
- Charge storage type semiconductor device and method for producing same14US 4,649,408 ATokyo Shibaura Denki Kabushiki Kaisha · 1987
- Charge-coupled device14US 4,878,102 AU. S. Philips Corporation · 1989
- Charge-coupled device11US 4,110,777 AU. S. Philips Corporation · 1978