Charge-coupled device

A charge-coupled device having a semiconductor body portion comprising a semiconductor layer of a first type conductivity, an adjoining substrate of a second type conductivity below said semiconductor layer which forms a p-n junction with the layer, means for electrically isolating the layer from its surroundings, said layer a thickness and a doping concentration such that a depletion zone is obtainable throughout the thickness thereof by applying a suitable electric field thereto, input means for locally introducing into the semiconductor layer information in the form of charge consisting of majority charge carriers, output means spaced apart from said input means for reading out said information, electrode means above the upper surface of the layer and electrically insulated therefrom for capacitively generating electric fields in the semiconductor layer upon application of a suitable signal to said electrode means to cause charge to be transported through the layer to the output means in a direction parallel to the layer, and a buried zone of said first type conductivity in said semiconductor layer and adjoining the p-n junction between the substrate and the semiconductor layer, which buried zone extends upwardly from the p-n junction up through only a minor part of the total thickness of the semiconcuctor layer and has a higher doping concentration than the adjoining remainder of the semiconductor layer which is present above the buried zone.