H10D 62/299
Having lateral doping variations
Official title: {having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601)}
H10D62/299 (Having lateral doping variations) appears on 1,673 US grants and 1,626 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,673
- Published applications
- 1,626
- Assignees
- 381
- Inventors
- 2,677
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 7 | 0 |
| 1981 | 10 | 0 |
| 1982 | 7 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 5 | 0 |
| 1994 | 7 | 0 |
| 1995 | 18 | 0 |
| 1996 | 13 | 0 |
| 1997 | 12 | 0 |
| 1998 | 27 | 0 |
| 1999 | 25 | 0 |
| 2000 | 42 | 0 |
| 2001 | 40 | 13 |
| 2002 | 41 | 36 |
| 2003 | 41 | 28 |
| 2004 | 36 | 39 |
| 2005 | 17 | 55 |
| 2006 | 36 | 51 |
| 2007 | 35 | 43 |
| 2008 | 28 | 67 |
| 2009 | 32 | 48 |
| 2010 | 56 | 66 |
| 2011 | 48 | 54 |
| 2012 | 54 | 61 |
| 2013 | 59 | 69 |
| 2014 | 78 | 80 |
| 2015 | 83 | 118 |
| 2016 | 102 | 90 |
| 2017 | 106 | 100 |
| 2018 | 85 | 96 |
| 2019 | 85 | 86 |
| 2020 | 90 | 75 |
| 2021 | 67 | 76 |
| 2022 | 63 | 74 |
| 2023 | 51 | 74 |
| 2024 | 49 | 60 |
| 2025 | 47 | 46 |
| 2026 | 28 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Surface-doped channels for threshold voltage modulation8 Sep 2026US 12,733,214 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device25 Aug 2026US 12,720,797 B2Renesas Electronics Corporation
- Electrostatic discharge (ESD) protection device and transistor structure25 Aug 2026US 12,720,825 B2Vanguard International Semiconductor Corporation
- Power semiconductor device and method for fabricating the same14 Jul 2026US 12,684,842 B2Hyundai Motor Company
- HVIC device with combined level shifter and boost diode in junction termination region16 Jun 2026US 12,658,893 B2Alpha and Omega Semiconductor International LP
- Field effect transistor for reducing hot carrier damage and methods for forming the same17 Sep 2026US 2026/0282425 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices and methods of manufacturing13 Aug 2026US 2026/0239690 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Two-rotation gate-edge diode leakage reduction for mos6 Aug 2026US 2026/0231464 A1
- Rectifier23 Jul 2026US 2026/0213673 A1Rohm Co., Ltd.
- Method of forming semiconductor device with implanted nanosheets23 Jul 2026US 2026/0214941 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device having an SOI structure and manufacturing method therefor528US 6,127,702 ASemiconductor Energy Laboratory Co.Ltd. · 2000
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Multiple gate semiconductor device and method for forming same285US 7,202,517 B2Interuniversitair Microelektronica Centrum (IMEC) vzw · 2007
- High-voltage transistor with multi-layer conduction region222US 6,207,994 B1Power Integrations, Inc. · 2001
- Low threshold voltage, high performance junction transistor206US 5,719,422 ASun Microsystems, Inc. · 1998