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US 2026/0214941 A1Published application
Method of forming semiconductor device with implanted nanosheets
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhi-Ren XIAO, Nuo XU, Zhiqiang WU
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Abstract
A method of forming a semiconductor device includes forming a fin on a substrate, the fin comprising alternately stacked first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers, implanting oxygen into the second semiconductor layers, and forming a gate structure wrapping around the second semiconductor layers.
Claims20
A semiconductor device, comprising:
- semiconductor channels extending in a first direction above a substrate and spaced apart in a second direction perpendicular to the substrate, wherein one of the semiconductor channels has an oxygen-doped region having a non-uniform oxygen concentration profile;
- a gate wrapping around the semiconductor channels;
- and
- source/drain regions on opposite sides of the gate.
1 more element
A semiconductor device, comprising:
- a substrate;
- nanosheets spaced apart from each other and stacked over the substrate, wherein one of the nanosheets is a multilayer structure comprising a lower semiconductor layer, a semiconductor oxide layer, and an upper semiconductor layer stacked in sequence;
- and
- a metal gate wrapping around the nanosheets, wherein the metal gate extends along a first direction and comprises an interfacial layer wrapping around the one of the nanosheets in a cross-sectional view cut along the first direction.
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A semiconductor device, comprising:
- a substrate;
- nanostructures spaced apart from each other and stacked over the substrate, wherein one of the nanostructures comprises a first region comprising a first oxygen concentration;
- and
- a metal gate wrapping around the nanostructures, wherein the metal gate comprises:
- an interfacial layer wrapping around the nanostructures, wherein the interfacial layer comprises a second oxygen concentration less than the first oxygen concentration;
- a gate dielectric layer over the interfacial layer;
- and
- a metal fill layer over the gate dielectric layer.
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Dependencies are inferred from the claim text.