H10D 62/159
Shapes
Official title: {Shapes}
H10D62/159 (Shapes) appears on 430 US grants and 490 published applications in this corpus.
Search patents in H10D- Granted patents
- 430
- Published applications
- 490
- Assignees
- 161
- Inventors
- 797
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 1 |
| 2002 | 1 | 3 |
| 2003 | 4 | 8 |
| 2004 | 7 | 4 |
| 2005 | 8 | 12 |
| 2006 | 9 | 10 |
| 2007 | 3 | 14 |
| 2008 | 3 | 16 |
| 2009 | 13 | 10 |
| 2010 | 14 | 14 |
| 2011 | 5 | 6 |
| 2012 | 15 | 17 |
| 2013 | 11 | 20 |
| 2014 | 22 | 25 |
| 2015 | 30 | 34 |
| 2016 | 35 | 43 |
| 2017 | 39 | 48 |
| 2018 | 30 | 27 |
| 2019 | 39 | 34 |
| 2020 | 31 | 35 |
| 2021 | 35 | 26 |
| 2022 | 16 | 24 |
| 2023 | 16 | 14 |
| 2024 | 15 | 16 |
| 2025 | 13 | 16 |
| 2026 | 5 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Structure and field effect transistor15 Sep 2026US 12,740,218 B2Murata Manufacturing Co., Ltd.
- FinFET with gate extension7 Apr 2026US 12,598,768 B2NXP B. V.
- Metal oxide semiconductor devices and integration methods17 Mar 2026US 12,581,686 B2GLOBALFOUNDRIES U. S. Inc.
- Transistor structure having a charge storage layer arranged between a field plate and a drift region3 Feb 2026US 12,543,341 B2Powerchip Semiconductor Manufacturing Corporation
- Corrugated metal oxide semiconductor transistor6 Jan 2026US 12,520,542 B2Texas Instruments Incorporated
- Semiconductor device13 Aug 2026US 2026/0239662 A1Minebea Power Semiconductor Device Inc.
- Structures and methods for self-aligned gate-drain overlap trench mosfets13 Aug 2026US 2026/0239664 A1Semiconductor Components Industries, LLC
- High voltage semiconductor device and manufacturing method of high voltage semiconductor device11 Jun 2026US 2026/0164704 A1SK keyfoundry Inc.
- Semiconductor device with improved breakdown voltage and associated manufacturing method7 May 2026US 2026/0129921 A1Monolithic Power Systems, Inc.
- Corrugated metal oxide semiconductor transistor16 Apr 2026US 2026/0107526 A1
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Trench MOSFET having improved breakdown and on-resistance characteristics152US 6,084,264 ASiliconix Incorporated · 2000
- High-voltage lateral transistor with a multi-layered extended drain structure68US 6,555,873 B2Power Integrations, Inc. · 2003
- Semiconductor device with trenched substrate and method64US 6,323,090 B1IXYS Corporation · 2001
- Nanotube semiconductor devices60US 8,299,494 B2Alpha and Omega Semiconductor Incorporated · 2012