Corrugated metal oxide semiconductor transistor

A method of forming a semiconductor device, comprising:

• providing a substrate including a semiconductor material;
• forming a corrugation member in the semiconductor material, the corrugation member including a top surface, a first lateral portion extending from the top surface to a first lower surface of the semiconductor material, and a second lateral portion extending from the top surface to a second lower surface of the semiconductor material;
• forming a transistor body in the semiconductor material, the transistor body having a first conductivity type;
• forming a transistor source in the semiconductor material, the transistor source having a second conductivity type complementary to the first conductivity type, the transistor source having a diffusion length at a midpoint in each of a respective second portion of the top surface, a second portion of the first lateral portion, a second portion of the second lateral portion, a second portion in the first lower surface, and a second portion in the second lower surface;
• and
• forming a transistor drain in the semiconductor material, the transistor drain having the second conductivity type, the transistor drain having the diffusion length at a midpoint in each of a respective third portion of the top surface, a third portion of the first lateral portion, a third portion of the second lateral portion, a third portion in the first lower surface, and a third portion in the second lower surface.