High-voltage lateral transistor with a multi-layered extended drain structure

A lateral high-voltage transistor fabricated on a substrate comprising:

• a drain region of a first conductivity type;
• at least one source region of the first conductivity type;
• a plurality of drift regions of the first conductivity type arranged substantially in parallel and extending in a first direction from the drain region to the at least one source region, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer, the first direction being oriented substantially parallel to a bottom surface of the substrate and the second direction being oriented substantially perpendicular to the bottom surface;
• at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions.

A lateral high-voltage transistor, comprising:

• a drain region of a first conductivity type;
• a body region of a second conductivity type opposite to the first conductivity type;
• a source region of the first conductivity type;
• first and second drift regions of the first conductivity type arranged substantially in parallel and extending in a first direction from the drain region to the body region, the source region being separated from the drift regions by the body region, the first and second drift regions being separated in a second direction substantially orthogonal to the first direction by a first dielectric layer;
• a first field plate member disposed within the dielectric layer, the first field plate member being fully insulated from the drift regions and arranged substantially parallel to the first and second drift regions such that the first field plate member is spaced-apart from each of the first and second drift regions by a separation distance, the first and second drift regions each having a width in the second direction that is less than or equal to the separation distance.

A lateral high-voltage transistor fabricated on a substrate comprising:

• a drain region of a first conductivity type;
• a body region of a second conductivity type opposite to the first conductivity type;
• at least one source region of the first conductivity type;
• a plurality of drift regions of the first conductivity type arranged substantially in parallel and extending in a first direction from the drain region to the body region, the at least one source region being separated from the drift regions by the body region, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer, the first direction being oriented substantially parallel to a bottom surface of the substrate and the second direction being oriented substantially perpendicular to the bottom surface;
• at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions.

A lateral high-voltage transistor fabricated on a substrate comprising:

• an insulating layer that covers a top surface of the substrate such that the substrate functions as a bottom field plate member;
• a drain region of a first conductivity type disposed above the insulating layer;
• a body region of a second conductivity type opposite to the first conductivity type disposed above the insulating layer;
• a plurality of drift regions of the first conductivity type arranged substantially in parallel and disposed above the insulating layer, each of the drift regions extending in a first direction from the drain region to the body region, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer;
• a field plate member disposed within each dielectric layer, the field plate member being fully insulated from the drift regions;
• a source region of the first conductivity type that adjoins the body region and is spaced-apart from the drift regions;
• and
• an insulated gate member disposed adjacent to the body region, with a channel region being defined in the body region adjacent the insulated gate member between the source region and at least one of the drift regions.

A lateral high-voltage transistor comprising:

• a drain region of a first conductivity type;
• a body region of a second conductivity type opposite to the first conductivity type;
• at least one source region of the first conductivity type;
• a plurality of drift regions of the first conductivity type arranged substantially in parallel and extending in a first direction from the drain region to the body region, the at least one source region being separated from the drift regions by the body region, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer;
• at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions and electrically Isolated from the drain region.

A lateral high-voltage transistor comprising:

• a drain region of a first conductivity type;
• at least one source region of the first conductivity type;
• a plurality of drift regions of the first conductivity type arranged substantially in parallel and extending in a first direction from the drain region to the at least one source region, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer;
• at least one field plate member disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions and arranged substantially parallel to the first and second drift regions such that the first field plate member is spaced-apart from each of the drift regions by a separation distance, each of the drift regions having a width in the second direction that is less than or equal to the separation distance.

A lateral high-voltage transistor comprising:

• a drain region of a first conductivity type
• a body region of a second conductivity type opposite to the first conductivity type;
• at least one source region of the first conductivity type;
• a plurality of drift regions of the first conductivity type arranged substantially in parallel and extending in a first direction from the drain region to the body region, the at least one source region being separated from the drift regions by the body region, adjacent ones of the drift regions being separated in a second direction substantially orthogonal to the first direction by a dielectric layer;
• at least one field plate member of a conductive material disposed within the dielectric layer, the at least one field plate member being fully insulated from the drift regions.