Corrugated metal oxide semiconductor transistor
AssigneeTexas Instruments Incorporated
InventorsSheldon Douglas Haynie, Alexei Sadovnikov, Brian Goodlin
Life of this patent
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Abstract
A method forms a semiconductor device with a substrate including semiconductor material formed to include plural corrugation members, each member including a top surface, and a first and second sidewall extending from the top surface to a lower surface. The method forms a contiguous transistor source extending through a first volume of each of the corrugation members and a first lower surface volume and a contiguous transistor drain extending through a second volume of each of the corrugation members and a second lower surface volume. Both source and drain are formed by initially diffusing a dopant in a uniform manner normal to various portions, some non-coplanar, of the source and drain, respectively.
Claims22
A method of forming a semiconductor device, comprising:
- providing a substrate including at least a portion of a semiconductor material;
- forming a plurality of corrugation members of the semiconductor material, each corrugation member in the plurality of corrugation members including a top surface, and a first and second sidewall extending from the top surface to a lower surface;
- forming a contiguous transistor drain extending through a first volume of each of the corrugation members and a first lower surface volume extending into the semiconductor material from the lower surface by initially diffusing a dopant in a uniform manner normal to a first portion of the top surface, a first portion of the first sidewall, a first portion of the second sidewall, and a first portion of the lower surface.
A semiconductor device, comprising:
- a substrate including at least a portion of a semiconductor material;
- a corrugation member, the corrugation member including a top surface of the semiconductor material, a first lateral portion extending from the top surface to a first corresponding lower surface of the semiconductor material, and a second lateral portion extending from the top surface to a second corresponding lower surface of the semiconductor material;
- a transistor body in the semiconductor material, the transistor body having a first conductivity type, the transistor body further including a first portion in the first corresponding lower surface and a first portion in the second corresponding lower surface;
- a transistor source in the semiconductor material, the transistor source having a second conductivity type complementary to the first conductivity type, the transistor source having a first diffusion length at a midpoint of a first portion aligned with the top surface, a second portion aligned with the first lateral portion, and a third portion aligned with the second lateral portion, the transistor source further including a second portion in the first corresponding lower surface and a second portion in the second corresponding lower surface;
- and
- a transistor drain in the semiconductor material, the transistor drain having the second conductivity type, the transistor drain further including a third portion in the first corresponding lower surface and a third portion in the second corresponding lower surface.
Dependencies are inferred from the claim text.