Semiconductor device with trenched substrate and method
AssigneeIXYS Corporation
InventorNathan Zommer
Life of this patent
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Abstract
A transistor structure has a recess formed in the upper surface of its base layer, an epitaxial (epi) layer grown on the upper surface in a manner to create a surface depression in the outer surface of the epi layer, the surface depression being generally aligned with the recess. A semiconductor element, such as a well or a gate, is formed on the epi layer aligned with the recess.
Claims9
A method for modifying a performance characteristic of a semiconductor device while producing the semiconductor device comprising:
- creating a recess in an upper surface of a base layer, the base layer comprising a chosen one of a p+ or n+ substrate;
- growing an epitaxial (epi) layer on the upper surface, the epi layer having an outer surface;
- and
- forming, on the epi layer, a semiconductor device element associated with the recess.
A method for modifying a performance characteristic of a semiconductor device while producing the semiconductor device comprising:
- creating a recess in an upper surface of a base layer;
- growing an epitaxial (epi) layer on the upper surface, the epi layer having an outer surface;
- the growing step being carried out to create a surface depression in the outer surface of the epi layer generally aligned with the recess;
- processing the outer surface of the epi layer to at least partially remove said surface depression from said outer surface, and then forming, on the epi layer, a semiconductor device element associated with the recess.
Dependencies are inferred from the claim text.