H10D 62/149
Source or drain regions of field-effect devices
Official title: {Source or drain regions of field-effect devices}
H10D62/149 (Source or drain regions of field-effect devices) appears on 14,427 US grants and 17,519 published applications in this corpus.
Search patents in H10D- Granted patents
- 14,427
- Published applications
- 17,519
- Assignees
- 1,195
- Inventors
- 13,425
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 12 | 0 |
| 1978 | 8 | 0 |
| 1979 | 5 | 0 |
| 1980 | 17 | 0 |
| 1981 | 14 | 0 |
| 1982 | 17 | 0 |
| 1983 | 22 | 0 |
| 1984 | 11 | 0 |
| 1985 | 18 | 0 |
| 1986 | 12 | 0 |
| 1987 | 24 | 0 |
| 1988 | 24 | 0 |
| 1989 | 30 | 0 |
| 1990 | 42 | 0 |
| 1991 | 42 | 0 |
| 1992 | 37 | 0 |
| 1993 | 26 | 0 |
| 1994 | 44 | 0 |
| 1995 | 55 | 0 |
| 1996 | 63 | 0 |
| 1997 | 65 | 0 |
| 1998 | 100 | 0 |
| 1999 | 102 | 0 |
| 2000 | 85 | 0 |
| 2001 | 81 | 40 |
| 2002 | 77 | 108 |
| 2003 | 94 | 114 |
| 2004 | 117 | 121 |
| 2005 | 117 | 192 |
| 2006 | 98 | 197 |
| 2007 | 129 | 212 |
| 2008 | 118 | 234 |
| 2009 | 139 | 262 |
| 2010 | 224 | 307 |
| 2011 | 260 | 305 |
| 2012 | 263 | 342 |
| 2013 | 338 | 428 |
| 2014 | 472 | 582 |
| 2015 | 569 | 744 |
| 2016 | 825 | 969 |
| 2017 | 1001 | 1041 |
| 2018 | 1025 | 1013 |
| 2019 | 1116 | 1271 |
| 2020 | 1205 | 1396 |
| 2021 | 1021 | 1115 |
| 2022 | 937 | 1168 |
| 2023 | 836 | 1354 |
| 2024 | 850 | 1436 |
| 2025 | 1025 | 1635 |
| 2026 | 610 | 933 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device6 Oct 2026US 12,757,434 B2Samsung Electronics Co., Ltd.
- Backside power distribution network and signal line integration6 Oct 2026US 12,757,444 B2International Business Machines Corporation
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Vertical gate-all-around device8 Oct 2026US 2026/0313962 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016