H10D 62/151
Of igfets
Official title: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
H10D62/151 (Of igfets) appears on 13,779 US grants and 16,882 published applications in this corpus.
Search patents in H10D- Granted patents
- 13,779
- Published applications
- 16,882
- Assignees
- 1,105
- Inventors
- 12,672
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 12 | 0 |
| 1978 | 7 | 0 |
| 1979 | 4 | 0 |
| 1980 | 15 | 0 |
| 1981 | 12 | 0 |
| 1982 | 14 | 0 |
| 1983 | 20 | 0 |
| 1984 | 6 | 0 |
| 1985 | 15 | 0 |
| 1986 | 8 | 0 |
| 1987 | 15 | 0 |
| 1988 | 20 | 0 |
| 1989 | 22 | 0 |
| 1990 | 35 | 0 |
| 1991 | 37 | 0 |
| 1992 | 33 | 0 |
| 1993 | 22 | 0 |
| 1994 | 34 | 0 |
| 1995 | 48 | 0 |
| 1996 | 48 | 0 |
| 1997 | 54 | 0 |
| 1998 | 95 | 0 |
| 1999 | 94 | 0 |
| 2000 | 79 | 0 |
| 2001 | 78 | 40 |
| 2002 | 75 | 99 |
| 2003 | 91 | 114 |
| 2004 | 111 | 119 |
| 2005 | 114 | 189 |
| 2006 | 93 | 188 |
| 2007 | 127 | 206 |
| 2008 | 115 | 224 |
| 2009 | 135 | 251 |
| 2010 | 212 | 294 |
| 2011 | 248 | 284 |
| 2012 | 251 | 332 |
| 2013 | 322 | 408 |
| 2014 | 447 | 562 |
| 2015 | 549 | 721 |
| 2016 | 797 | 936 |
| 2017 | 962 | 1000 |
| 2018 | 997 | 984 |
| 2019 | 1083 | 1216 |
| 2020 | 1153 | 1355 |
| 2021 | 987 | 1070 |
| 2022 | 902 | 1124 |
| 2023 | 799 | 1282 |
| 2024 | 814 | 1383 |
| 2025 | 977 | 1590 |
| 2026 | 586 | 911 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof6 Oct 2026US 12,757,432 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Backside power distribution network and signal line integration6 Oct 2026US 12,757,444 B2International Business Machines Corporation
- Co-integration of S/D metal contact cut and wrap-around-contact6 Oct 2026US 12,757,445 B2International Business Machines Corporation
- Fully-isolated MOS device6 Oct 2026US 12,757,450 B2United Microelectronics Corp.
- Memory device and manufacturing method thereof8 Oct 2026US 2026/0313901 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to implant p-type and/or n-type rings in a semiconductor device8 Oct 2026US 2026/0313952 A1Allegro MicroSystems, LLC
- Vertical gate-all-around device8 Oct 2026US 2026/0313962 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016