H10D 62/156
Drain regions of dmos transistors
Official title: {Drain regions of DMOS transistors}
H10D62/156 (Drain regions of dmos transistors) appears on 3,680 US grants and 4,326 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,680
- Published applications
- 4,326
- Assignees
- 522
- Inventors
- 3,884
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 10 | 0 |
| 1991 | 7 | 0 |
| 1992 | 8 | 0 |
| 1993 | 5 | 0 |
| 1994 | 11 | 0 |
| 1995 | 17 | 0 |
| 1996 | 21 | 0 |
| 1997 | 12 | 0 |
| 1998 | 24 | 0 |
| 1999 | 28 | 0 |
| 2000 | 21 | 0 |
| 2001 | 27 | 14 |
| 2002 | 27 | 47 |
| 2003 | 41 | 67 |
| 2004 | 56 | 64 |
| 2005 | 64 | 90 |
| 2006 | 43 | 107 |
| 2007 | 70 | 125 |
| 2008 | 61 | 111 |
| 2009 | 80 | 157 |
| 2010 | 124 | 158 |
| 2011 | 150 | 170 |
| 2012 | 140 | 182 |
| 2013 | 194 | 208 |
| 2014 | 239 | 288 |
| 2015 | 270 | 268 |
| 2016 | 246 | 254 |
| 2017 | 232 | 205 |
| 2018 | 186 | 209 |
| 2019 | 223 | 253 |
| 2020 | 211 | 221 |
| 2021 | 197 | 179 |
| 2022 | 132 | 188 |
| 2023 | 122 | 204 |
| 2024 | 131 | 225 |
| 2025 | 134 | 201 |
| 2026 | 98 | 131 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Gate-all-around transistor circuit modification using direct contact and/or access probe points6 Oct 2026US 12,757,776 B2Intel Corporation
- Semiconductor device22 Sep 2026US 12,745,433 B2Fuji Electric Co., Ltd.
- Structure and field effect transistor15 Sep 2026US 12,740,218 B2Murata Manufacturing Co., Ltd.
- Transistor8 Sep 2026US 12,733,202 B2Samsung Electronics Co., Ltd.
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Semiconductor device and method of forming the same17 Sep 2026US 2026/0282460 A1Vanguard International Semiconductor Corporation
- High voltage semiconductor device3 Sep 2026US 2026/0262245 A1United Microelectronics Corp.
- High voltage semiconductor device3 Sep 2026US 2026/0262246 A1United Microelectronics Corp.
- Semiconductor device and method for manufacturing the same27 Aug 2026US 2026/0255630 A1Silergy Semiconductor Technology (Hangzhou) LTD
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance374US 5,637,898 ANorth Carolina State University · 1997
- Power MOSFET369US 5,438,215 ASiemens Aktiengesellschaft · 1995
- Semiconductor devices exhibiting minimum on-resistance320US 4,941,026 AGeneral Electric Company · 1990