Semiconductor device and method of forming the same
AssigneeVanguard International Semiconductor Corporation
InventorsChih-Hung LIN, Chia-Hao LEE
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Abstract
A semiconductor device includes a substrate, a first well region, a second well region, a gate structure, a source structure, a drain structure, and an ohmic contact layer. The first well region and the second well region are disposed adjacent to one another in the substrate and have opposite doping types. The gate structure spans the first well region and the second well region. The source structure is disposed in the first well region. The drain structure is disposed in the second well region. The ohmic contact layer is disposed on the second well region to form an ohmic contact with the second well region. The ohmic contact layer is disposed between the gate structure and the drain structure.
Claims20
A semiconductor device, comprising:
- a substrate;
- a first well region and a second well region disposed adjacent to one another in the substrate and having opposite doping types;
- a gate structure spanning the first well region and the second well region;
- a source structure disposed in the first well region;
- a drain structure disposed in the second well region;
- and
- an ohmic contact layer disposed on the second well region to form ohmic contact with the second well region, wherein the ohmic contact layer is disposed between the gate structure and the drain structure.
A method for forming a semiconductor device, comprising:
- providing a substrate having a first well region and a second well region disposed adjacent to one another to each other and having opposite doping types;
- forming a gate structure spanning the first well region and the second well region;
- forming a source structure in the first well region;
- forming a drain structure in the second well region;
- and
- forming an ohmic contact layer on the second well region to form ohmic contact with the second well region, wherein the ohmic contact layer is disposed between the gate structure and the drain structure.
Dependencies are inferred from the claim text.