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US 12,740,218 B2Granted
Structure and field effect transistor
AssigneeMurata Manufacturing Co., Ltd.
InventorsHiroki Sato, Naruto Miyakawa, Shota Ushiba, Ayumi Shinagawa, Tomomi Nakano, Yuka Tokuda, Madoka Nishio, Shinsuke Tani
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Abstract
A field effect transistor includes a substrate, a material layer on a surface of the substrate and including a two-dimensional material or carbon nanotubes, and particles interposed between the substrate and the material layer.
Claims20
A field effect transistor comprising:
- a substrate;
- a material layer on a surface of the substrate and including a two-dimensional material or carbon nanotubes;
- particles interposed between the substrate and the material layer;
- a source electrode on the surface of the substrate and electrically connected to the material layer;
- and
- a drain electrode on the surface of the substrate and spaced apart from the source electrode electrically connected to the material layer;
- wherein
- at least some of the particles are directly on the substrate.
5 more elements
Dependencies are inferred from the claim text.