Gate-all-around transistor circuit modification using direct contact and/or access probe points

A method for editing an integrated circuit (IC) structure, comprising:

• receiving the IC structure comprising a gate-all-around transistor comprising a gate structure between a source and a drain, the IC structure comprising a gate contact, a source contact, a drain contact on front side surfaces of the gate structure, the source, and the drain, respectively, a front side metallization layer over a device layer comprising the gate-all-around transistor, and a back side metallization layer under the device layer, and wherein a first die comprises the IC structure and the first die is mounted to a second die;
• exposing a back side surface of at least one of the gate structure, the source, or the drain by removing a portion of the second die to expose the first die and removing a portion of the back side metallization layer to expose the back side surface of at least one of the gate structure, the source, or the drain;
• and
• forming a wire by direct write deposition, the wire comprising a first end on the back side surface of at least one of the gate structure, the source, or the drain and a second end on a second circuit structure.